Thin film YSZ-based limiting current-type oxygen and humidity sensor on thermally oxidized silicon substrates

Akasaka, Shunsuke

doi:10.1016/j.snb.2016.06.025

Cited by 26 publications

(10 citation statements)

References 23 publications

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“…Despite several benefits offered by YSZ electrolyte its applicability is mainly limited due to (i) great sensitivity to deactivation of the ionic conductor under low operating temperature, and (ii) impossibility of low temperature synthesis because of high melting point [15]. These drawbacks allow YSZ electrolyte to be selectively applied for the synthesis of specialty physic [16][17][18][19]. In this regard, RF magnetron sputtering became a successful technique because of its ability to deposit high melting point oxides at low substrate temperatures.…”

Section: Introductionmentioning

confidence: 99%

Annealing temperature induced improved crystallinity of YSZ thin film

Rusli

Muhammad

Ghoshal

et al. 2020

Mater. Res. Express

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Six YSZ thin films (YSZTFs) were prepared at varied annealing temperature (380°C to 600°C) by radio frequency magnetron sputtering method. Glancing angle x-ray diffraction (GAXRD) pattern revealed the polycrystalline nature of all films with crystallite size in the range of 9 to 15 nm. Sample annealed at 400°C displayed the lowest microstrain (0.262) and crystallinity (60%). FESEM images disclosed dense, homogeneous and crack free growth of annealed samples compared to as-deposited one. EDX spectra detected the right elemental compositions of films. AFM images showed growth evolution of YSZ grains with size range between 0.2 to 5 nm and improved films' surface roughness. HRTEM measurement of the studied YSZTFs exhibited lattice orientation and atomic structure of nucleated YSZ nanocrystallites. Furthermore, film annealed at 500°C divulged less oriented structure because of dislocation.

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Section: Introductionmentioning

confidence: 99%

Annealing temperature induced improved crystallinity of YSZ thin film

Rusli

Muhammad

Ghoshal

et al. 2020

Mater. Res. Express

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“…As can be seen, the sensing characteristics of the oxygen sensor obtained almost coincide under different p (H 2 O), indicating that the p (H 2 O) does not have significant effect on the I - V characteristics within the test range. Some studies about the influence of p (H 2 O) on the limiting current oxygen sensor show that the porous type sensor is affected by p (H 2 O), while the dense type sensor is not affected [18,25,26]. The dense type oxygen sensor has excellent selectivity to oxygen, which is an excellent indicator of the sensor.…”

Section: Resultsmentioning

confidence: 99%

A limiting Current Oxygen Sensor Constituted of (CeO2)0.95(Y2O3)0.05 as Solid Electrolyte Layer and (CeO2)0.75(ZrO2)0.25 as Dense Diffusion Barrier Layer

Wang

Liu

2019

Sensors

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Using the co-precipitation method to synthesize (CeO2)0.95(Y2O3)0.05 (YDC) and solidreaction method to synthesize (CeO2)0.75(ZrO2)0.25 (ZDC), and the crystal structure, micro-structure,total conductivity and electronic conductivity of the two materials was measured with X-raydiffraction (XRD), scanning electron microscope (SEM), DC van der Pauw and Hebb-Wagnermethods. A limiting current oxygen sensor was prepared with YDC solid electrolyte and a ZDCdense diffusion barrier layer by employing platinum pasting bonding. Sensing characteristics ofthe sensor were obtained at different conditions, including temperature (T), oxygen concentration(x(O2)) and water vapor pressure (p(H2O)), and the influence of various conditions on sensingperformance was studied. The long-term stability of the sensor was measured in an oxygen concentration of 1.2% and at a temperature of 800 °C for 120 h. XRD results show that the phase structure of both YDC and ZDC belongs to the cubic phase. SEM results show that both YDC and ZDC layers are dense layers, which are then qualified to be the composition materials of the sensor. The limiting current (IL) of the sensor is obtained and the sensor exhibits good sensing characteristics to satisfy the Knudsen model. Log(IL·T) depends linearly on 1000/T with a squared correlation coefficient (R2) of 0.9904; IL depends linearly on x(O2) with an R2 of 0.9726; and sensing characteristics are not affected by p(H2O). It was found that the oxygen sensor has good long-term stability.

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“…Yttria-stabilized zirconia (YSZ) is widely employed in technical applications such as thermal barrier coatings [1][2][3], solid oxide fuel cells (SOFC) [4][5][6][7], and oxygen gas sensors [8,9]. Besides its high thermal and mechanical stability, the ionic conductivity of YSZ plays a major role in most of its applications.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Sputtering Technique and Thermal Annealing on YSZ Thin Films for Oxygen Sensing Applications

et al. 2021

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Yttria-stabilized zirconia (YSZ) thin films were deposited using direct current (reactive and metallic) and radio frequency magnetron sputtering. The effect of the deposition technique and annealing treatment on the microstructure and crystallinity of the thin films was assessed. Using the films produced in this work, oxygen gas sensors were built and their performance under vacuum conditions was evaluated. All the films exhibited a cubic crystalline structure after a post-deposition thermal treatment, regardless of the sputtering technique. When the annealing treatment surpassed 1000 °C, impurities were detected on the thin film surface. The oxygen gas sensors employing the reactive and oxide-sputtered YSZ thin films displayed a proportional increase in the sensor current as the oxygen partial pressure was increased in the evaluated pressure range (5 × 10−6 to 2 × 10−3 mbar). The sensors which employed the metallic-deposited YSZ films suffered from electronic conductivity at low partial pressures.

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Thin film YSZ-based limiting current-type oxygen and humidity sensor on thermally oxidized silicon substrates

Cited by 26 publications

References 23 publications

Annealing temperature induced improved crystallinity of YSZ thin film

Annealing temperature induced improved crystallinity of YSZ thin film

A limiting Current Oxygen Sensor Constituted of (CeO2)0.95(Y2O3)0.05 as Solid Electrolyte Layer and (CeO2)0.75(ZrO2)0.25 as Dense Diffusion Barrier Layer

Influence of the Sputtering Technique and Thermal Annealing on YSZ Thin Films for Oxygen Sensing Applications

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