Thin films engineering of indium tin oxide: Large area flat panel displays application

Betz, U.; Olsson, Maryam; Marthy, J.; Escolà, M.F.; Atamny, F.

doi:10.1016/j.surfcoat.2005.08.144

Cited by 381 publications

(191 citation statements)

References 17 publications

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“…Also, ZnO is non-toxic, inexpensive, and abundant, which becomes a very important factor, considering the limited supply of indium and the growing demand for ITO largescale production. 9 Moreover, ZnO is chemically and thermally stable in hydrogen-containing plasmas, which are employed, in the presence of SiH 4 gas, for the deposition of silicon-based thin film p-i-n junctions. [10][11][12][13] Therefore, impurity-doped ZnO, e.g., ZnO:Al, is considered to be an attractive candidate to replace ITO.…”

Section: Introductionmentioning

confidence: 99%

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Ponomarev

Verheijen

Keuning

et al. 2012

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Ponomarev, M., Verheijen, M. A., Keuning, W., Sanden, van de, M. C. M., & Creatore, M. (2012). Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition. Journal of Applied Physics, 112(4), 043708-1/7. [043708]. DOI: 10.1063/1.4747942 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control of the resistivity gradient and providing the solution towards thin ( 300 nm) ZnO:Al layers, exhibiting a resistivity value as low as 4 Â 10 À4 X cm. The approach chosen in this work is to enable the development of several ZnO:Al crystal orientations at the initial stages of the CVD-growth, which allow the formation of a densely packed structure exhibiting a grain size of 60-80 nm for a film thickness of 95 nm. By providing an insight into the growth of ZnO:Al layers, the present study allows exploring their application into several solar cell technologies. Highly conducting (doped) ZnO thin films are being used in diverse applications, such as light-emitting 1 and laser diodes, 2 architectural and automotive glazing, 3 thin-film transistors, 4,5 and high efficiency thin-film solar cells. 6 This latter makes use of ZnO as transparent conducting oxide (TCO), whe...

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Section: Introductionmentioning

confidence: 99%

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Ponomarev

Verheijen

Keuning

et al. 2012

Journal of Applied Physics

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“…Films having a high native surface roughness can be beneficial for light trapping in solar cell applications 16 . In other applications, however, different thickness/ roughness ratios are required; for example, smooth surfaces are preferred for electronic devices 18 . This makes the understanding the surface evolution and its correlation with electrical and optical properties mandatory for specific ZnO thin film applications.…”

Section: Introductionmentioning

confidence: 99%

Morphological and electrical evolution of ZnO: Al thin filmsdeposited by RF magnetron sputtering onto glass substrates

et al. 2014

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“…Until now, ITO is the TCO material having with the lowest resistivity (i.e. order of 1-2 × 10 −4 Ω·cm), which is widely utilized as the transparent electrodes in flatpanel displays [28,29]. Table 1 summarizes the most promising mechanisms of modulation and its corresponding materials.…”

Section: Transparent Conductive Oxides Used In Photonicsmentioning

confidence: 99%

Indium-Tin-Oxide for High-performance Electro-optic Modulation

et al. 2015

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Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently, the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices on-chip. In particular, indium tin oxide (ITO) is found to have refractive index changes on the order of unity. This property makes it possible to achieve electrooptic modulation of sub-wavelength device scales, when thin ITO films are interfaced with optical light confinement techniques such as found in plasmonics; optical modes are compressed to nanometer scale to create strong light-matter interactions. Here we review efforts towards utilizing this novel material for high performance and ultra-compact modulation. While high performance metrics are achieved experimentally, there are open questions pertaining to the permittivity modulation mechanism of ITO. Finally, we review a variety of optical and electrical properties of ITO for different processing conditions, and show that ITO-based plasmonic electro-optic modulators have the potential to significantly outperform diffractionlimited devices.

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Thin films engineering of indium tin oxide: Large area flat panel displays application

Cited by 381 publications

References 17 publications

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Morphological and electrical evolution of ZnO: Al thin filmsdeposited by RF magnetron sputtering onto glass substrates

Indium-Tin-Oxide for High-performance Electro-optic Modulation

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