Thin films of topological crystalline insulator SnTe in contact with heterogeneous atomic layers

Lee, Chi-Hsuan; Yang, Chih–Kai

doi:10.1088/1367-2630/aa5132

Cited by 3 publications

(3 citation statements)

References 23 publications

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“…We now turn our attention to SnTe, a system in which, according to ARPES experiments [7,38] and ab initio simulations [6,39,40] the inversion of the band gap does occur. Our DFT band structure, shown in black in Fig.…”

Section: A Electronic Structure At the Experimental Lattice Parametermentioning

confidence: 99%

GW study of pressure-induced topological insulator transition in group-IV tellurides

Aguado‐Puente

Fahy

Grüning

2020

Phys. Rev. Research

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We calculate the electronic structure of the narrow gap semiconductors PbTe, SnTe, and GeTe in the cubic phase using density functional theory (DFT) and the G 0 W 0 method. Within DFT, we show that the band ordering obtained with a conventional semilocal exchange-correlation approximation is correct for SnTe and GeTe but wrong for PbTe. The correct band ordering at the high-symmetry point L is recovered adding G 0 W 0 quasiparticle corrections. However, one-shot G 0 W 0 produces artifacts in the band structure due to the wrong orbital character of the DFT single-particle states at the band edges close to L. We show that in order to correct these artifacts it is enough to consider the off-diagonal elements of the G 0 W 0 self-energy corresponding to these states. We also investigate the pressure dependence of the band gap for these materials and the possibility of a transition from a trivial to a nontrivial topology of the band structure. For PbTe, we predict the band crossover and topological transition to occur at around 4.8 GPa. For GeTe, we estimate the topological transition to occur at 1.9 GPa in the constrained cubic phase, a pressure lower than that of the structural phase transition from rombohedral to cubic. SnTe is a crystalline topological insulator at ambient pressure, and the transition into a trivial topology would take place under a volume expansion of approximately 10%.

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Section: A Electronic Structure At the Experimental Lattice Parametermentioning

confidence: 99%

GW study of pressure-induced topological insulator transition in group-IV tellurides

Aguado‐Puente

Fahy

Grüning

2020

Phys. Rev. Research

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show abstract

“…We turn now our attention to SnTe, a system in which, according to ARPES experiments [7,37] and ab initio simulations [6,38,39] the inversion of the band gap does occur. Our DFT band structure, shown in black in Fig.…”

Section: A Electronic Structure At the Experimental Lattice Parametermentioning

confidence: 99%

$GW$ study of pressure-induced topological insulator transition in group IV-tellurides

Aguado-Puente,

Fahy,

Grüning

2020

Preprint

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We calculate the electronic structure of the narrow gap semiconductors PbTe, SnTe and GeTe in the cubic phase using density functional theory (DFT) and the G0W0 method. Within DFT, we show that the band ordering obtained with a conventional semilocal exchange-correlation approximation is correct for SnTe and GeTe but wrong for PbTe. The correct band ordering at the high-symmetry point L is recovered adding G0W0 quasiparticle corrections. However, one-shot G0W0 produces artifacts in the band structure due to the wrong orbital character of the DFT single-particle states at the band edges close to L. We show that in order to correct these artifacts it is enough to consider the off-diagonal elements of the G0W0 self-energy corresponding to these states. We also investigate the pressure dependence of the band gap for these materials and the possibility of a transition from a trivial to a non-trivial topology of the band structure. For PbTe, we predict the band crossover and topological transition to occur at around 4.8 GPa. For GeTe, we estimate the topological transition to occur at 1.9 GPa in the constrained cubic phase, a pressure lower than the one of the structural phase transition from rombohedral to cubic. SnTe is a crystalline topological insulator at ambient pressure, and the transition into a trivial topology would take place under a volume expansion of approximately 10%.

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“…Tin telluride (SnTe) is a direct bandgap semiconductor with a bandgap of 0.18 eV, which has a cubic structure and is also a popular topological crystal insulator (TCI) material for research. As a non-toxic material, SnTe possesses a narrow bandgap, high dielectric constant, large exciton Bohr radius [1,2] and other characteristics, and is often widely paid attention in thermoelectric devices, photovoltaic, microelectronics fields [3][4][5][6][7]. Due to the high concentration of Sn vacancies, SnTe is always heavily p-doped [8].…”

Section: Introductionmentioning

confidence: 99%

Orietation-controlled synthesis and Raman study of 2D SnTe

Su,

Ding,

Yao

et al. 2023

Nanotechnology

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Tin telluride (SnTe), as a narrow bandgap semiconductor material, has great potential for developing photodetectors with wide spectra and ultra-fast response. At the same time, it is also an important topological crystal insulator material, with different topological surface states on several common surfaces. Here, we introduce different Sn sources and control the growth of regular SnTe nanosheets along the (100) and (111) planes through the atmospheric pressure chemical vapor deposition (APCVD) method. It has been proven through various characterizations that the synthesized SnTe is a high-quality single crystal. In addition, the angular resolved Raman spectra of SnTe nanosheets grown on different crystal planes are first demonstrated. The experimental results showed that square SnTe nanosheets grown along the (100) plane exhibit in-plane anisotropy. At the same time, we use micro-nanofabrication technology to manufacture SnTe-based field effect transistors (FETs) and photodetectors to explore their electrical and optoelectronic properties. It has been confirmed that transistors based on grown SnTe nanosheets exhibit p-type semiconductor characteristics and have a high response to infrared light. This work provides a new approach for the controllable synthesis of SnTe and adds new content to the research of SnTe-based infrared detectors.

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Thin films of topological crystalline insulator SnTe in contact with heterogeneous atomic layers

Cited by 3 publications

References 23 publications

GW study of pressure-induced topological insulator transition in group-IV tellurides

GW study of pressure-induced topological insulator transition in group-IV tellurides

$GW$ study of pressure-induced topological insulator transition in group IV-tellurides

Orietation-controlled synthesis and Raman study of 2D SnTe

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