Thin Ge-Se films as a sensing material for radiation doses

Ailavajhala, Mahesh; Nichol, Tyler; Gonzalez-Velo, Y.; Poweleit, C. D.; Barnaby, Hugh; Kozicki, Michael; Butt, Darryl P.; Mitkova, M.

doi:10.1002/pssb.201350188

Cited by 6 publications

(2 citation statements)

References 23 publications

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“…As noted above, while many studies have investigated the effects of gamma radiation on various compositions of bulk ChG, only a few studies have been done to understand gamma-induced effects in the thin film form of these materials. [25][26][27][28] Because thermally evaporated As 2 Se 3 thin films have been proposed for microphotonic applications, 29 the effect of gamma exposure on thermally evaporated, glassy As 2 Se 3 films is therefore studied in this paper by PAL spectroscopy. Thin films of varying thickness are compared to bulk As 2 Se 3 glass and the post-irradiation stability of the radiation-induced modification of glass network is examined.…”

Section: Fig 1: Coordination Topological Defects Formed By Gamma Radmentioning

confidence: 99%

Positron annihilation lifetime spectroscopy (PALS) studies of gamma irradiated As2Se3 films used in MIR integrated photonics

Novak

Singh

Monmeyran

et al. 2017

Journal of Non-Crystalline Solids

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Chalcogenide glass (ChG) materials are increasingly being utilized in infrared planar photonic devices due to their tailorable refractive indices and compatibility with other on-chip materials and manufacturing methodologies. The performance and reliability of such integrated photonic components in land or space-based environments where radiation impact structure and properties is important to their ultimate deployment. Bulk glasses and thermally evaporated thin films of As 2 Se 3 were subjected to a gamma exposure of 229 Mrad to compare bulk/film material response and the impact of film thickness on such response. Positron annihilation lifetime (PAL) spectroscopy was employed to compare the effect of gamma irradiation on the different forms of the glass. The average positron lifetime was found to be longer for the films than the bulk glass in unirradiated specimens, and the films showed more significant increases in lifetimes with gamma exposure. This effect was more pronounced for thinner films, which showed, for example, an increase in positron lifetime. Positron lifetime was measured over the course of 20 days after exposure, over which the effect of the gamma radiation was found to relax at room temperature. Longterm or incomplete relaxation of the gamma-induced changes were observed in the films, while the bulk glass positron lifetime returned to pre-exposed values. A proposed mechanism for these observations based on coordination topological defects (CTD) is presented to explain the initial and longer term response, and the possible consequence when such films are integrated in device geometries.

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Section: Fig 1: Coordination Topological Defects Formed By Gamma Radmentioning

confidence: 99%

Positron annihilation lifetime spectroscopy (PALS) studies of gamma irradiated As2Se3 films used in MIR integrated photonics

Novak

Singh

Monmeyran

et al. 2017

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

show abstract

“…M. L. Ciurea et al discuss the electrical properties related to the structure of GeSi nanostructured films. M. S. Ailavajhala et al show the sensitivity to radiation of thin Ge–Se films. Finally, M. L. Trunov et al develop an interesting and modern subject: light‐induced mass transport in amorphous chalcogenides, contributing to further progress in surface plasmon‐assisted nanolithography and near‐field nanoimaging.…”

mentioning

confidence: 99%