Thin-layer electrochemical studies of the oxidative underpotential deposition of sulfur and its application to the electrochemical atomic layer epitaxy deposition of CdS

Electrodeposition of Semiconductors

“…Huang and co-workers [67] showed that thick films of CdTe (beyond 10 monolayers) can be deposited with this technique; however, they stated that film morphology suffers above 100 cycles. This technology relies on a thorough understanding of the fundamental mechanisms for the deposition of the constituent elements in atomic monolayers, and this was investigated by this group [68][69][70] and useful experimental data are provided in these references. This has also been investigated in detail for Te by Hayden and Nandhakumar [71], who investigated the structure of wellordered Te layers by scanning tunneling microscopy through the deposition cycle and for Cd by Niece and Gewirth [72].…”

EQCM study on the oxidation/reduction of bismuth sulfide thin films

“…3). It may be assumed that under the potential region of anodic peak A1 S is oxidized to sulfate [27]. In this case the number of electrons used for anodic stripping of S is six and the theoretical m/z value for this process is 5.3 g mol À1 .…”

Electrosynthesis of cadmium sulfide on sulfur- or thiol-modified polycrystalline gold electrodes

“…The formation of S atomic layers on Au from alkaline sulfide solutions has been studied, and the relevance of these experiments to thiol-based SAMs was pointed out [13]. The same group had earlier used the oxidative underpotential deposition (upd) of sulfur for the preparation of CdS by electrochemical atomic layer epitaxy [14].…”