Thin layer oxide in the drift region of Laterally double-diffused metal oxide semiconductor on silicon-on-insulator: A novel device structure enabling reliable high-temperature power transistors

Preparation of a Ti0.7W0.3O2/TiO2 nanocomposite interfacial photocatalyst and its photocatalytic degradation of phenol pollutants in wastewater

“…When the pure rutile Ti 0.7 W 0.3 O 2 was irradiated, conduction band electrons (e cb − ) were generated and quickly spread to the valence band due to the shorter band gap energy, which might make the semiconductor have higher conductivity. 53 The volume resistivity and conductivity of pure anatase TiO 2 , 0.3 wt% Pt/TiO 2 and 5 wt% Ti 0.7 W 0.3 O 2 /TiO 2 are shown in Fig. 3(F) .…”

Modifying Buried Layers in Nano-MOSFET for Achieving Reliable Electrical Characteristics

“…Moreover, high thermal conductivity of silicon than silicon dioxide in the modified buried layers of the proposed structure reduces maximum temperature in the transistor. [23][24][25] In Fig. 6 maximum temperature of the MB-MOSFET and C-MOSFET is plotted for the different channel length.…”

“…By increasing the temperature, the mobility reduces and decreased drain saturation current happens. In the past, many structures have been proposed to reduce self heating effect [10][11][12][13][14] where a silicon window is replaced by a part of the buried oxide. This strategy transfers heat from the active region to the substrate.…”

Controlling floating body effect in high temperatures: L-shape SiGe region in nano-scale MOSFET

“…This effect is due to the extending SiGe region under the channel. Replacing a semiconductor material instead of insulator layer is attractive to achieve reliable devices [11][12][13].…”