Thin Layer SOI-FETs Used for Stress-Sensing and Its Application in Accelerometers

Wang, Huiquan; Yang, Junyi; Yan, Sheping; Jin, Zhonghe

doi:10.1109/tase.2012.2198467

Cited by 3 publications

(1 citation statement)

References 16 publications

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“…In 1979, Roylance et al proposed a piezoresistive microsilicon accelerometer for the first time [2]. In addition, with the development of microelectromechanical system (MEMS) technology, acceleration sensors have been widely used in the field of inertial systems to test the acceleration of moving object [3,4,5]. Up to date, the three-axis acceleration sensor has realized the measurements of the velocity and posture for moving objects including unmanned aerial vehicle, gravity gradiometer, wearable acceleration sensor for monitoring human movement behavior, etc.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characteristics of a SOI Three-Axis Acceleration Sensor Based on MEMS Technology

Zhao

Wang

2019

Micromachines

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A silicon-on-insulator (SOI) piezoresistive three-axis acceleration sensor, consisting of four L-shaped beams, two intermediate double beams, two masses, and twelve piezoresistors, was presented in this work. To detect the acceleration vector (ax, ay, and az) along three directions, twelve piezoresistors were designed on four L-shaped beams and two intermediate beams to form three detecting Wheatstone bridges. A sensitive element simulation model was built using ANSYS finite element simulation software to investigate the cross-interference of sensitivity for the proposed sensor. Based on that, the sensor chip was fabricated on a SOI wafer by using microelectromechanical system (MEMS) technology and packaged on a printed circuit board (PCB). At room temperature and VDD = 5.0 V, the sensitivities of the sensor along x-axis, y-axis, and z-axis were 0.255 mV/g, 0.131 mV/g, and 0.404 mV/g, respectively. The experimental results show that the proposed sensor can realize the detection of acceleration along three directions.

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