Thin oxynitride solution for digital and mixed-signal 65nm CMOS platform

Abstract

This work shows the benefits of using Plasma Nitrided gate oxide which supports the gate leakage requirements for 6Snm plarform development. Electrical data shows gate leakage to be reduced by half a decade compared to conventional NO processing with loff @3nA/um, Vdd=0.9V for 65nm GP requirements. Extensive device characterization of the plasma nitride process is presented where the reduction in gafe leakage offers benefits in ternis of a 4.r reduction in static power, a 6% reduction in dynamic power consumption, comparative analog performance and improved reliability

Negative bias temperature instability: What do we understand?

“…Plasma nitridation leads to reduced NBTI degradation compared to nitrous oxide illustrated in Fig. 9 [29]. During plasma nitridation the nitrogen diffuses from the top into the oxide with the nitrogen concentration skewed more heavily toward the gate/ oxide part of the oxide.…”

“…(a) Nitrogen concentration versus depth and (b) drain current change versus stress time for nitrous oxide and plasma nitrided oxides showing the beneficial effects of plasma nitridation[29].…”

Excess drain noise simulation in ultrathin oxides MOSFETs

“…The 1.2 nm thin gate oxide have been fabricated using PN (Plasma Nitridation) process [5] and the polysilicon gate thickness is 1500Å. The source and drain n+ regions are doped by arsenic atoms and they have a LDD architecture (Lightly Doped Drain).…”

Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor's

“…Recently, plasma nitrided oxide (PNO) has been proposed for further improvement of PMOSFETs reliability and performance. 3,4) Along with the effort to improve NBTI characteristics using the nitridation in silicon dioxide, nitrogen (N) effect on the NBTI degradation has been widely carried out. There were reports that oxynitride can enhance the NBTI degradation.…”