2002
DOI: 10.1016/s0040-6090(01)01535-8
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Thin ZnS:Cu,Ga and ZnO:Cu,Ga film phosphors

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Cited by 33 publications
(26 citation statements)
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“…The blue-green emission centered at 486 nm is due to a radiative transition of an electron from the deep donar level of Zn i to an acceptor level of neutral V Zn [38]. The green emission at 527 nm is attributed to radiative transition of an electron from the deep donor level of Zn i to an acceptor level caused by singly ionized charged state of the defect V Zn − in ZnO [39][40][41][42] as illustrated in the energy level diagram ( Fig. 10) representing the emission probabilities from respective luminescence centers.…”
Section: Uv-visible Absorption Spectrummentioning
confidence: 99%
“…The blue-green emission centered at 486 nm is due to a radiative transition of an electron from the deep donar level of Zn i to an acceptor level of neutral V Zn [38]. The green emission at 527 nm is attributed to radiative transition of an electron from the deep donor level of Zn i to an acceptor level caused by singly ionized charged state of the defect V Zn − in ZnO [39][40][41][42] as illustrated in the energy level diagram ( Fig. 10) representing the emission probabilities from respective luminescence centers.…”
Section: Uv-visible Absorption Spectrummentioning
confidence: 99%
“…Besides, treating nanorods or nanoparticles with some organic materials will greatly modify the electrical and optical properties [18][19][20]. Doping ZnO with Cu has also been carried out, in which Cu is used as phosphor [21], active material in varistor [22] and to introduce ferromagnetism into ZnO [23], respectively. Cu-doping can also introduce blue and green emission bands.…”
Section: Introductionmentioning
confidence: 99%
“…Progress in producing high-quality ZnO to obtain ferromagnetism at or above room temperature by doping with 3-d transition metals has been highlighted in several papers [6][7][8]. The effect of Fe doping as a magnetism activator and as a compensator of n-type material is of great importance for II-VI semiconductors [9][10][11]. It has been found that the diluted magnetic semiconductors formed by replacing the cations of III-V or II-VI nonmagnetic semiconductors by ferromagnetic Mn, Fe and Co exhibit a number of unique magnetic, magneto-optical and magnetotransport properties, applicable for magneto-electronic and spintronic devices.…”
Section: Introductionmentioning
confidence: 99%