Thinning of CIGS solar cells: Part II: Cell characterizations

Tuning the gallium content of metal precursors for Cu(In,Ga)Se2 thin film solar cells by electrodeposition from a deep eutectic solvent

“…The latter figure is higher than V oc for the CIS record cell (491 mV), 16 indicating that Ga was incorporated into the photoactive semiconductor lattice. 18 The authors attributed this observation to absorption losses, increased reflectivity of the layers and higher recombination at the back contact. Bhattacharya 17 and Ribeaucourt 3 reported 427 mV and 456 mV for solar cells with efficiencies of 10.9% and 9.3%, respectively.…”

Quenching Mo optical losses in CIGS solar cells by a point contacted dual-layer dielectric spacer: a 3-D optical study

“…However, reducing the absorber thickness results in less light absorption, more recombination at the back contact (as more charge carriers are created near the back contact) and shunting problems [6,[8][9][10]. Furthermore, molybdenum (Mo) is a low-reflective metal [11,12] and Mo / CIGS interface is a highly recombinative interface [13].…”

Light absorption enhancement for ultra-thin Cu(In1−xGax)Se2 solar cells using closely packed 2-D SiO2 nanosphere arrays

“…One approach to lower the cost is to reduce the thickness of the CIGSe photoactive layer, which allows for the reduction of material consumption, especially of the rare element In. However, reducing the thickness of the CIGSe photoactive layer from the typical 2-3 µm to below 500 nm will inevitably lead to incomplete absorption of the incident light and will deteriorate the solar cell performance [1][2][3]. Therefore, light absorption enhancement is crucial to maintaining high efficiencies for ultra-thin (absorber thickness below to 500 nm) CIGSe solar cells.…”