2023
DOI: 10.1016/j.mtcomm.2023.106052
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Thiophene-centered PMMA unified thin films with electrical, photoluminescence, and third-order nonlinear optical potentials for optoelectronic applications

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Cited by 2 publications
(3 citation statements)
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“…Mn:ZnS/PMMA 3.1 [1] PMMA+30 mL CNDs 4 [34] 1.0 wt% NaTiO 3 @PMMA 3.5 [15] 10% TM@PMMA 3.82 [16] MAPbBr 3 /PMMA 2.28 [73] Rh6G/TiO 2 /PMMA PNCs 3.86 [74] 0.6 wt.% SV@PMMA 2.02 Our work…”
Section: Samples Indirect Band Gap (Ev)mentioning
confidence: 83%
See 1 more Smart Citation
“…Mn:ZnS/PMMA 3.1 [1] PMMA+30 mL CNDs 4 [34] 1.0 wt% NaTiO 3 @PMMA 3.5 [15] 10% TM@PMMA 3.82 [16] MAPbBr 3 /PMMA 2.28 [73] Rh6G/TiO 2 /PMMA PNCs 3.86 [74] 0.6 wt.% SV@PMMA 2.02 Our work…”
Section: Samples Indirect Band Gap (Ev)mentioning
confidence: 83%
“…13 Haleshappa et al fabricated thiophene-centered PMMA films for optoelectronics applications, and the results showed that the band gap changes from 3.83 to 3.77 eV upon changing the concentration of thiophene. 16 There is now a growing interest in using multinary compound semiconductors for different device applications due to their distinct electrical, optical, and chemical properties. 17,18 Specifically, the remarkable features of silver vanadate (SV) could be attributed to the versatile nature of its geometric structure, which enables Ag and V ions to adopt diverse local coordination sites.…”
Section: Introductionmentioning
confidence: 99%
“…Since there is a direct relation between the emission and the temperature, the charge transfer mechanism and the level of defects, knowledge of these parameters is significant. 49,50 Fig. 8 Variation of skin depth with respect to photon energy.…”
Section: Photoluminescence Analysismentioning
confidence: 99%