Third edge for a graphene nanoribbon: A tight-binding model calculation

Bahamon, D. A.; Pereira, Ana Luiza Cardoso; Schulz, P. A.

doi:10.1103/physrevb.83.155436

Cited by 57 publications

(68 citation statements)

References 41 publications

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“…The first one, (2,0), consists of domains with the aligned crystallographic orientations θ L = θ R = θ = 0 • (d ≈ 0.5 nm) and separated by a zigzag-oriented interface of one octagon and two side-sharing pentagons. [16][17][18][19]23 The repeat vector (2,1) of the second one implies θ L = θ R = θ = 10.9 • (d ≈ 0.65 nm) and its interface region includes pentagon-heptagon pairs. 6,17 We would like to note that while we study two representative GBs, (2,0) and (2,1) (corresponding to aligned and misaligned crystallographic orientations), we believe that our findings are generic and remain valid for other GBs in graphene.…”

Section: Basicsmentioning

confidence: 99%

“…[12][13][14][15] This provides a strong motivation for investigation of morphological, electronic, and spin properties of GBs. A number of studies have been recently reported addressing the band structure, [16][17][18][19][20] spin polarization, 16,17,21,22 electron transport and scattering 12,13,20 in GBs. However, all these studies were limited to the case of electrically neutral graphene, and very little is presently known on how the electronic and transport properties of GBs are modified at nonzero electron densities (i.e., away from the Dirac point).…”

Section: Introductionmentioning

confidence: 99%

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Electron interaction, charging, and screening at grain boundaries in graphene

Ihnatsenka

Zozoulenko

2013

Phys. Rev. B

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Electronic, transport, and spin properties of grain boundaries (GBs) are investigated in electrostatically doped graphene at finite electron densities within the Hartree and Hubbard approximations. We demonstrate that depending on the character of the GBs, the states residing on them can have a metallic character with a zero group velocity or can be fully populated losing the ability to carry a current. These states show qualitatively different features in charge accumulation and spin polarization. We also demonstrate that the semiclassical Thomas-Fermi approach provides a satisfactory approximation to the calculated self-consistent potential. The conductance of GBs is reduced due to enhanced backscattering from this potential.

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Section: Basicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electron interaction, charging, and screening at grain boundaries in graphene

Ihnatsenka

Zozoulenko

2013

Phys. Rev. B

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“…The first one is an LD-ZGNR whose electronic and transport properties have been previously calculated by a TB model. 19 It has been reported that the line defect behaves as an effective third edge and can be used as a quantum wire. 19 The second one is an LD-BG, in which the line defect has been reported to give rise to the valley filtering effect.…”

Section: Electronic Eigen States Of Dirac Equationmentioning

confidence: 99%

“…19 It has been reported that the line defect behaves as an effective third edge and can be used as a quantum wire. 19 The second one is an LD-BG, in which the line defect has been reported to give rise to the valley filtering effect. 17 To comparing the dispersion relation and the wavefunction obtained by solving the Dirac equation with the TB numerical result, we find both results agree with each other very well in low-energy region.…”

Section: Electronic Eigen States Of Dirac Equationmentioning

confidence: 99%

“…18 Thirdly, when the line defect is embedded in a zigzag-edged graphene nanoribbon, it introduces new conductance quantization values and modifies the conductance quantization threshold. 19 Furthermore, when the line defect is positioned very close to one of the zigzag edge, the graphene nanoribbon shows a half-metallic subband structure. 20 To our knowledge, most theoretical investigations, e.g., the aforementioned works, on the electronic properties of graphene in the presence of line defects are so far based on the tight-binding (TB) model or the ab-initio calculations.…”

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confidence: 99%

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Dirac-equation description of the electronic states of graphene with a line defect: Wave-function connection condition

Jiang

Gao

et al. 2012

Phys. Rev. B

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The presence of an extended line defect in graphene brings about some interesting electronic properties to such a truly two-dimensional (2D) carbon material, such as the energy band engineering and valley filtering. By establishing an appropriate connection condition for the spinor wavefunction across the line defect, we find that the massless Dirac equation is still a valid theoretical model to describe low-energy electronic properties of the line defect embedded graphene structure. To check the validity of the wavefunction connection condition, we take two kinds of line defect embedded graphene structures as examples to study the low-energy electronic states by solving the Dirac equation. Firstly, for a line defect embedded zigzag-edged graphene nanoribbon, we obtain analytical results about the subband dispersion and eigen wavefunction, which coincide well with the numerical results from the tight-binding approach. Then, for a 2D graphene embedded with an extended line defect, we get an exact expression about the valley polarized electronic transmission probability, which demonstrates the simple result estimated previously in zero-energy limit. More interestingly, our analytical result indicates that in such a 2D graphene structure a quasi one-dimensional (1D) electronic state occurs along the line defect. And the electronic group velocity in this quasi 1D electronic state can be readily modulated by applying a strain field around the line defect.

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Electronic, transport, magnetic, and optical properties of graphene nanoribbons and their optical sensing applications: A comprehensive review

et al. 2022

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Low dimensional materials have attracted great research interest from both theoretical and experimental point of views. These materials exhibit novel physical and chemical properties due to the confinement effect in low dimensions. The experimental observations of graphene open a new platform to study the physical properties of materials restricted to two dimensions. This featured article provides a review on the novel properties of quasi one‐dimensional (1D) material known as graphene nanoribbon. Graphene nanoribbons can be obtained by unzipping carbon nanotubes (CNT) or cutting the graphene sheet. Alternatively, it is also called the finite termination of graphene edges. It gives rise to different edge geometries, namely zigzag and armchair, among others. There are various physical and chemical techniques to realize these materials. Depending on the edge type termination, these are called the zigzag and armchair graphene nanoribbons (ZGNR and AGNR). These edges play an important role in controlling the properties of graphene nanoribbons. The present review article provides an overview of the electronic, transport, optical, and magnetic properties of graphene nanoribbons. However, there are different ways to tune these properties for device applications. Here, some of them, such as external perturbations and chemical modifications, are highlighted. Few applications of graphene nanoribbon have also been briefly discussed.

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Third edge for a graphene nanoribbon: A tight-binding model calculation

Cited by 57 publications

References 41 publications

Electron interaction, charging, and screening at grain boundaries in graphene

Electron interaction, charging, and screening at grain boundaries in graphene

Dirac-equation description of the electronic states of graphene with a line defect: Wave-function connection condition

Electronic, transport, magnetic, and optical properties of graphene nanoribbons and their optical sensing applications: A comprehensive review

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