Third generation and multicolor IRFPA developments: a unique approach based on DEFIR (Invited Paper)

Tribolet, Philippe; Destéfanis, G.

doi:10.1117/12.607544

Cited by 20 publications

(8 citation statements)

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“…For 25 years, the standard MCT-based IR device technology in France has relied on n + -n --p boron ion-implanted planar architecture in Hg vacancy p-type doped base layer [1]. This well-established technology offers substantial advantages in terms of process robustness, with high reliability and yield [2] [3].…”

Section: Introductionmentioning

confidence: 99%

Low-dark current p-on-n MCT detector in long and very long-wavelength infrared

et al. 2015

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This paper presents recent developments done at CEA-LETI Infrared Laboratory on processing and characterization of p-on-n HgCdTe (MCT) planar infrared focal plane arrays (FPAs) in LWIR and VLWIR spectral bands. These FPAs have been grown using liquid phase epitaxy (LPE) on a lattice matched CdZnTe substrate. This technology presents lower dark current and lower serial resistance in comparison with n-on-p vacancy doped architecture and is well adapted for low flux detection or high operating temperature. This architecture has been evaluated for space applications in LWIR and VLWIR spectral bands with cutoff wavelengths from 10µm up to 17µm at 78K. Innovations have been introduced to the technological process to form a heterojunction with a LPE growth technique. The aim was to lower dark current at low temperature, by decreasing currents from the depletion region. Electro-optical characterizations on p-on-n photodiodes have been performed on QVGA format FPAs with 30µm pixel pitches. Results show excellent operabilities in current and responsivity, with low dispersion and noise limited by current shotnoise. Studies performed on dark current show that dark current densities are consistent with the heuristic prediction law "Rule07" at 78K. Below this temperature, dark current varies as a pure diffusion current.

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Section: Introductionmentioning

confidence: 99%

Low-dark current p-on-n MCT detector in long and very long-wavelength infrared

et al. 2015

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“…For sensing applications, incremental versions can have the same performances as conventional ones at lower oversampling and hence lower power consumption. The development of a stand alone incremental sigma delta test structure is under progress in collaboration with CEA LETI Grenoble [3]. It will be based on a second order incremental sigma delta ADC in order to reach sufficient resolution.…”

Section: Sigma Delta Adcmentioning

confidence: 99%

Latest developments on MCT staring arrays

et al. 2006

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HgCdTe (Mercury Cadmium Telluride / MCT) staring arrays for infrared detection do show constant improvements regarding their compactness and performances. New detectors are now proposed offering system solutions in the different IR wavebands and profiting of the latest technology improvements as well as MCT performance advantages and cost reduction. As a matter of fact, the size of MCT wafer has grown to 4", the pixel pitch was lowered to 15µm while maintaining outstanding results on the Focal Plane Arrays (FPA) uniformity. New functions as the Analog to Digital Conversion (ADC) are added to read-out circuits. Results are presented concerning Non Uniformity Corrections (NUC) stabilities for two Sofradir products. Then results from developments of integrated ADC are addressed and finally, the Jupiter 1280x1024 mid-wave (MWIR) MCT detector performance results are presented.

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“…The achievement of a stand alone incremental sigma delta test structure is under progress in collaboration with CEA LETI Grenoble [6]. In order to reach sufficient resolution, a second order incremental sigma delta ADC will be designed.…”

Section: Expected Performancesmentioning

confidence: 99%

Digital output for high-performance MCT staring arrays

et al. 2006

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The InfraRed staring arrays offered by SOFRADIR are more and more compact and offer system solutions in the different IR wavebands. The HgCdTe (Mercury Cadmium Telluride / MCT) material and process, as well as the hybridization technology, have been taken to an even more advanced level of sophistication to achieve these new staring arrays high performances. Latest developments have also been focused on the readout silicon circuit. A frame rate increase, new types of customized functions and digital converter are an important progress in this field. In order to match each system requirements, different flexible architectures of Analog To Digital Converter (ADC) have been developed. These developments implement specific requests in terms of frame rate, power consumption and resolution. Beyond the performance aspects, digital focal plan arrays can be considered as the first step towards a new low cost dewar family, since they allow for a more simple electrical interface on dewar designs. New results concerning these new readout circuit architectures are presented in this paper.

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Third generation and multicolor IRFPA developments: a unique approach based on DEFIR (Invited Paper)

Cited by 20 publications

References 0 publications

Low-dark current p-on-n MCT detector in long and very long-wavelength infrared

Low-dark current p-on-n MCT detector in long and very long-wavelength infrared

Latest developments on MCT staring arrays

Digital output for high-performance MCT staring arrays

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