Third Generation SiC Fibers for Nuclear Applications

Abstract

The third generation SiC fibers have near-stoichiometric composition and polycrystallinity with high density. Compared with the first and second generations, they have obvious improvements in heat-resistance, creep-resistance and radiation-resistance. Accordingly, they have more advantages and broader prospects in engineering applications, especially in the nuclear field. In this paper, the fabrication and performance characteristics of the third generation SiC fibers are introduced and compared. The applications of the third generation SiC fibers in the field of nuclear energy are reviewed, and the development prospects are prospected.

Tunable Thermal Conductivity of Two-Dimensional SiC Nanosheets by Grain Boundaries: Implications for the Thermo-Mechanical Sensor

“…6 Astonishingly, third-generation SiC/ SiC fiber composites exhibit virtually unchanged properties even under irradiation conditions of 800 °C and 10 dpa (displacements per atom). 7 In contrast to semiconductor silicon (which has a bandgap energy of 1.12 eV at room temperature), SiC (with a bandgap energy of 3.27 eV) is a wide-bandgap semiconductor that has demonstrated exceptional performance in the detection of γ rays, neutrons, and charged particles at extremely high levels. 8 As a result, SiC semiconductor devices exhibit outstanding resistance to radiation and high-temperature environments, making them suitable for use in challenging settings like nuclear reactors and space stations.…”

“…Additionally, employing bipolar junction transistor devices and metal-oxide-semiconductor field-effect transistors in SiC-integrated circuits allows for operation within a temperature range of 25 to 500 °C . Astonishingly, third-generation SiC/SiC fiber composites exhibit virtually unchanged properties even under irradiation conditions of 800 °C and 10 dpa (displacements per atom) . In contrast to semiconductor silicon (which has a bandgap energy of 1.12 eV at room temperature), SiC (with a bandgap energy of 3.27 eV) is a wide-bandgap semiconductor that has demonstrated exceptional performance in the detection of γ rays, neutrons, and charged particles at extremely high levels .…”

Oxidation Behavior of the Si-B-X (X = Mo, Cr, or Ti) Alloys in the Temperature Range of 1000–1400 °C

“…However, the temperature of the RMI process generally exceeds 1600 °C. − The relatively high reaction temperatures would damage the fiber, resulting in a decrease in the mechanical properties of the composite. , Chen et al investigated the effects of heat treatment temperature on Cansas-III SiC fibers (Leaoasia New Material Co., Ltd.). They determined that the average tensile strength of the SiC fiber was approximately 1.81 GPa before heat treatment and decreased to 1.13 GPa after heat treatment at 1700 °C for 1 h. The strength retention rate was only 62.4% at 1700 °C.…”