Third harmonic generation in undoped and X doped ZnO films (X: Ce, F, Er, Al, Sn) deposited by spray pyrolysis

Abstract

There is a current interest in research of wide band gap semiconductor materials for the purposes of third order nonlinear optical properties in view of optoelectronics applications. Materials for nonlinear optics should present important changes of nonlinear intensity, dependence on changes of nonlinear refractive index, short response time, and weak absorption losses. We report the results of the third order nonlinear optical susceptibilities of undoped and doped (cerium, fluorine, erbium, aluminum, and tin) zinc oxide films using the third harmonic generation technique at 1064 nm wavelength region in picoseconds regime. Thin films were grown on glass substrate by the spray pyrolysis technique at different temperatures of substrates and characterized by using the x-ray diffraction, scanning electron microscope, transmission, and photoluminescence. A strong third harmonic signal was obtained from the studied films with a good crystallinity and roughness. We have found that at high conductivity, there is a big conversion of the third harmonic signal at different dopants and at an appropriate concentration. We might say that the morphology and the crystalline quality of the films are the main factors for this high conversion.

Influence of Ag, Cu dopants on the second and third harmonic response of ZnO films

“…This work is a continuation of our previous work connected with NLO properties in ZnO structures [11,[26][27][28].…”

Effects of deposition temperature on the surface roughness and the nonlinear optical susceptibility of sprayed deposited ZnO:Zr thin films

“…Surface areas were equal to 6.3 mm  6.3 mm. Third order nonlinear optical susceptibility x (3) of undoped and doped ZnO thin films was examined by THG method described elsewhere [8].…”

Dependence of nonlinear refractive index of ZnSe on Be and Mg content

“…This behaviour can be understood if one takes into consideration that the free carrier concentration in Zn 1-x Be x Se samples is higher than that in Zn 1-x Mg x Se ones with the similar Be and Mg content. It is commonly known that when the electric conductivity increases, the values of nonlinear optical properties increase too [14].…”