Third order intermodulation distortion in Film Bulk Acoustic Resonators at resonance and antiresonance

Nonlinear Distributed Model for Bulk Acoustic Wave Resonators

“…These parasitic elements are consistent with those extracted from other resonators on the same wafer [11].…”

“…Thereafter, other works [5]- [9] used lumped approaches based in Tiersten's equations or in nonlinear versions of the Butterworthvan-Dike equivalent circuit (BVD) [10] in which one or several lumped elements of the acoustic branch (series circuit) are nonlinear. Some of our previous work [11] also uses a phenomenological approach based on the BVD circuit to model the IMD occurring in a film bulk acoustic resonator (FBAR).…”

Sources of Third–Order Intermodulation Distortion in Bulk Acoustic Wave Devices: A Phenomenological Approach

“…For the particular case of a two-tone experiment, in which the envelope is a sinusoid, the thermal generation of 3IMD has a low-pass dependence on the envelope frequency due to the slow dynamics related with heating effects. Recent results of two-tone 3IMD tests in BAW resonators as a function of the tones spacing reveal the important impact of self-heating effects in thin-Film Bulk Acoustic Resonators (FBAR) Feld, 2009;Rocas et al, 2008) and Solidly Mounted Resonators (SMR) …”

Unified model for Bulk Acoustic Wave resonators' nonlinear effects

“…Existing models usually make use of nonlinear lumped circuit elements, which are specific to the geometry of the measured device and are difficult to relate to the material properties. Such approaches usually lead to narrow-band, phenomenological descriptions that fail to predict nonlinear effects for different geometries and materials [3], [4].…”