Third order non-linear optical susceptibilities <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si24.svg"><mml:mrow><mml:msup><mml:mrow><mml:mo stretchy="false">(</mml:mo><mml:mi>χ</mml:mi></mml:mrow><mml:mfenced open="(" close=")"><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:mfenced></mml:msup><mml:mrow><mml:mo stretchy="false">)</mml:mo></mml:mrow></mml:mrow></mml:math> of yttria stabilized cubic hafnium(IV) oxide

Denawi, Hassan; Demarais, Jacques K.; Praveen, C. S.; Rérat, Michel; Karamanis, Panaghiotis

doi:10.1016/j.cplett.2021.139157

Cited by 1 publication

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References 26 publications

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“…When yttrium is doped in HfO 2 , it replaces the hafnium in the cubic HfO 2 structure, increasing the concentration of oxygen vacancies. [25,26] With an increase in the yttrium concentration, the association of yttrium cations and oxygen vacancies increases, leading to the formation of complex defects that decrease the ionic conductivity. [14,21,27] For the YSH with a low yttrium concentration, which has high ionic conductivity, proton migration can occur smoothly because the interval of energy levels in which protons can migrate does not differ considerably.…”

Section: Physical Properties Of Ysh Solid-state Electrolytementioning

confidence: 99%

First Demonstration of Yttria‐Stabilized Hafnia‐Based Long‐Retention Solid‐State Electrolyte‐Gated Transistor for Human‐Like Neuromorphic Computing

Jin,

2023

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Electrolyte‐gated transistors have strong potential for high‐performance artificial synapses in neuromorphic bio‐interfaces owing to their outstanding synaptic characteristics, low power consumption, and human‐like mechanisms. However, the short retention time is a hurdle to overcome owing to the natural diffusion of protons. Here, a novel modulation technique of ionic conductivity is proposed with yttria‐stabilized hafnia for the first time to enhance the retention characteristic of a solid‐state electrolyte‐gated transistor‐based artificial synapse. With the optimization of the ionic conductivity in yttria‐stabilized hafnia, a high retention time of over 300 s and remarkable synaptic characteristics are accomplished by regulating channel conductance with precise modulation of the strength of the proton‐electron coupling intensity along the input signals. Furthermore, pattern recognition simulation is conducted based on the measured synaptic characteristics, exhibiting 94.41% of operation accuracy, which implies a promising solution for neuromorphic in‐memory computing systems with a high operation accuracy and low power consumption.

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Section: Physical Properties Of Ysh Solid-state Electrolytementioning

confidence: 99%

First Demonstration of Yttria‐Stabilized Hafnia‐Based Long‐Retention Solid‐State Electrolyte‐Gated Transistor for Human‐Like Neuromorphic Computing

Jin,

2023

Small

View full text Add to dashboard Cite

show abstract

Third order non-linear optical susceptibilities (χ3) of yttria stabilized cubic hafnium(IV) oxide

Cited by 1 publication

References 26 publications

First Demonstration of Yttria‐Stabilized Hafnia‐Based Long‐Retention Solid‐State Electrolyte‐Gated Transistor for Human‐Like Neuromorphic Computing

First Demonstration of Yttria‐Stabilized Hafnia‐Based Long‐Retention Solid‐State Electrolyte‐Gated Transistor for Human‐Like Neuromorphic Computing

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