Third-order nonlinearity in silicon beyond 2350 nm

Gholami, Fatemeh; Zlatanovic, Sanja; Simić, Aleksandar; Liu, Lan; Borlaug, David; Alić, N.; Nezhad, Maziar P.; Fainman, Yeshaiahu; Radic, S.

doi:10.1063/1.3630130

Cited by 40 publications

(39 citation statements)

References 16 publications

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“…We numerically solve Eqs. (1) and (2) using the split-step Fourier method [19], with values n 2 9 × 10 −14 cm 2 ∕W, γ 3PA 0.025 cm 3 ∕GW 2 , σ 3.7 × 10 −21 m 2 , and μ 4.7, as taken from the literature [22][23][24]. We use a value of 10 ns for the free-carrier lifetime, taken as an upper estimate from the measurements of smaller but similar devices [25].…”

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confidence: 99%

Octave-spanning mid-infrared supercontinuum generation in silicon nanowaveguides

et al. 2014

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We report, to the best of our knowledge, the first demonstration of octave-spanning supercontinuum generation (SCG) on a silicon chip, spanning from the telecommunications c-band near 1.5 μm to the mid-infrared region beyond 3.6 μm. The SCG presented here is characterized by soliton fission and dispersive radiation across two zero group-velocity dispersion wavelengths. In addition, we numerically investigate the role of multiphoton absorption and free carriers, confirming that these nonlinear loss mechanisms are not detrimental to SCG in this regime. It is well known that pumping in the anomalous wavelength region near the zero group-velocity dispersion (ZGVD) wavelength may result in broadband SCG predominantly governed by soliton fission and dispersive wave generation [5]. Furthermore, it has been shown theoretically and experimentally that under suitable conditions, a second ZGVD wavelength on the opposite side of the pump will result in even broader SCG due to the generation of redshifted dispersive waves [3,4]. While silicon-based SCG in the MIR wavelength range has been previously demonstrated [11,12], the generated spectrum was limited to 990 nm, as the spectral broadening was mainly due to modulation instability with a single dispersive wave at lower wavelengths.In this Letter, we present a fundamentally different SCG, characterized by soliton fission and dispersive radiation across both ZGVD wavelengths, which enables us to achieve MIR spectra spanning 1.3 octaves, from 1.51 to 3.67 μm, in a silicon wire waveguide. This demonstration represents, to the best of our knowledge, the first octave-spanning SCG from a silicon chip.The silicon-on-insulator (SOI) waveguide used in our experiments has a cross section of 320 nm by 1210 nm, and a length of 2 cm, and is engineered to exhibit a ZGVD wavelength on each side of the 2.5 μm pump. Figure 1 shows the group-velocity dispersion (GVD) of the waveguide for the fundamental transverse electric (TE) mode, modeled using a custom finitedifference mode solver. The GVD is anomalous within the tuning range of the pump and falls to zero near 2.1 and 3.0 μm. The waveguide cross section and mode profile at λ 2.5 μm are shown in the inset. Fig. 1. Simulated group-velocity dispersion (GVD) curve for fundamental TE mode of an SOI waveguide with a cross section of 320 nm by 1210 nm, which results in anomalous GVD near the pump wavelength of 2.5 μm and zero-GVD wavelengths near 2.1 and 3.0 μm. The waveguide cross section and the mode profile are shown in the inset.

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Octave-spanning mid-infrared supercontinuum generation in silicon nanowaveguides

et al. 2014

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“…They achieve 940 dB gain over a wavelength range exceeding 580 nm. Recent studies performed in 2011 by Hon et al [24] and Gholami et al [25] indicate that the thirdorder nonlinearity in silicon beyond 2.2 m is comparable to that in the near-infrared region. With the further development of platforms that exhibit lower losses in the midinfrared region, including siliconon-porous-silicon and silicon-on-sapphire [26]- [28], the operation wavelength range of parametric mixing devices should extend into the 3-5-m midinfrared region.…”

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confidence: 94%

Breakthroughs in Nonlinear Silicon Photonics 2011

2012

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“…However, this only solves the secondary effect of free carriers-it has no effect on silicon's intrinsic nonlinear figure of merit (FOM = n 2 /β λ, where β is the TPA coefficient and λ the wavelength), which is only 0.3 near 1550 nm [25][26][27] ( Fig. 2.1).…”

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confidence: 98%

“…Realizing nanowires with ultrahigh nonlinearity (>10,000 W −1 km −1 ) has proven elusive due to fabrication challenges, as has been achieving a material reliability on par with semiconductors. AlGaAs was the first platform proposed for nonlinear optics in the telecom band [25][26][27], showing that the FOM is well below 1 in the telecom band due to the indirect TPA, and exceeds 1 beyond 2000 nm, making it an attractive nonlinear platform in this wavelength range [32] and offers the powerful ability to tune the nonlinearity and FOM by varying the alloy composition. A significant issue for AlGaAs, however, is that nanowires require very challenging fabrication [33] methods.…”

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CMOS Compatible Platforms for Integrated Nonlinear Optics

Moss

Morandotti

2015

Springer Series in Optical Sciences

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Nonlinear photonic chips are capable of generating and processing signals all-optically with performance far superior to that possible electronicallyparticularly with respect to speed. Although silicon-on-insulator has been the leading platform for nonlinear optics, its high two-photon absorption at telecommunications wavelengths poses a fundamental limitation that is an intrinsic property of silicon's bandstructure. We review recent progress in new non-silicon CMOScompatible platforms for nonlinear optics, focusing on Hydex glass and silicon nitride, and briefly discuss the promising new platform of amorphous silicon. These material systems have opened up many new capabilities such as on-chip optical frequency comb generation, ultrafast optical pulse generation and measurement. We highlight their potential future impact as well as the challenges to achieving practical solutions for many key applications. IntroductionAll-optical signal generation and processing [1, 2] have been highly successful at enabling a vast array of capabilities, such as switching and de-multiplexing of signals at unprecedented speeds [3,4], achieving parametric gain [5] on a chip, Raman lasing [6], wavelength conversion [7], optical logic [8], all-optical regeneration [9, 10], radio-frequency (RF) spectrometers operating at THz speeds [11,12], as well as entirely new functions such as ultra-short pulse measurement [13,14] and generation [15] on a chip, optical temporal cloaking [16], and many others. Phase sensitive functions [14,17], in particular, will likely be critical for

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Third-order nonlinearity in silicon beyond 2350 nm

Cited by 40 publications

References 16 publications

Octave-spanning mid-infrared supercontinuum generation in silicon nanowaveguides

Octave-spanning mid-infrared supercontinuum generation in silicon nanowaveguides

Breakthroughs in Nonlinear Silicon Photonics 2011

CMOS Compatible Platforms for Integrated Nonlinear Optics

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