“…The third route to formation of Si· is removal of the silicon-bound H· by a chalcogenyl radical, shown in Scheme c. ,, The thiyl, selenyl, and telluryl radicals would result from homolysis of the weak S–S, Se–Se, or Te–Te bond, which have bond dissociation energies of 53–57, ∼40, and ∼30–35 kcal/mol, respectively, under these high-temperature conditions (Scheme d) . Thiyl and selenyl radicals are known radical propagators, and presumably telluryl radicals would play a similar role, plucking hydrogen atoms from the silicon surface to produce silyl surface radicals, particularly under high concentrations of reagents. − …”