Thomas-Fermi approximation in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type δ-doped quantum wells of GaAs and Si

Gaggero‐Sager, L. M.; Contreras-Solorio, D. A.

doi:10.1103/physrevb.57.6286

Cited by 44 publications

(39 citation statements)

References 20 publications

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“…Details of the model can be found in Refs. [11,12]. Particular attention will be paid to the effect of the transition from direct to indirect gap as a result of the increasing applied pressure (see Table I).…”

Section: Introductionmentioning

confidence: 99%

Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

Duque¹

2006

Braz. J. Phys.

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The calculation of the electronic energy levels of n-type δ-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10 13 cm −2

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Section: Introductionmentioning

confidence: 99%

Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

Duque¹

2006

Braz. J. Phys.

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“…One of the earliest models of a δ-doped layer was the application of the Thomas-Fermi (TF) theory 13,18,19 to an n-type δ-layer, in general. 20 Later, this same TF method was applied to p-type δ-layers in GaAs and Si 21 and, combined with TB in a study of n-type δ-doped Si and B layers in GaAs. 22 Transport properties in ntype δ-layers in Si have also been studied using the TF method.…”

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confidence: 99%

Electronic properties ofδ-doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method

2014

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The Thomas-Fermi-Dirac (TFD) approximation and an sp 3 d 5 s * tight binding method were used to calculate the electronic properties of a δ-doped phosphorus layer in silicon. This self-consistent model improves on the computational efficiency of "more rigorous" empirical tight binding and ab initio density functional theory models without sacrificing the accuracy of these methods. The computational efficiency of the TFD model provides improved scalability for large multi-atom simulations, such as of nanoelectronic devices that have experimental interest. We also present the first theoretically calculated electronic properties of a δ-doped phosphorus layer in germanium as an application of this TFD model.

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“…At low temperatures, the Fermi level is located only very few meV obove the bands's edge [34,35]. Therefore is a good approximation to take it coinciding with the potential well vertex.…”

Section: Original Papermentioning

confidence: 98%

Thomas–Fermi–Dirac calculations of valence band states in two p‐type delta‐doped ZnSe quantum wells

Rodrı́guez-Vargas

Gaggero‐Sager²,

Martı́nez-Orozco

2005

Physica Status Solidi (b)

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PACS 73.21.Fg, 73.61.Ga We present the hole sub-band structure study in two p-type δ -doped ZnSe QW's. An analytical expression for the Hartree-Fock potential is obtained following the lines of the Thomas-Fermi-Dirac (TFD) approximation. We have analyzed the dependence of the hole energy levels to the impurity density and the interlayer distance between wells. The exchange effects are also included in the present survey. We find that many body effects cannot be ignored because these are really important in the calculation at least in the low concentration regime. We have obtained an energy difference between the top of the valence band and the ground energy of the heavy hole ladder of 0 29 0in good agreement with the experimental reports ( DAP 2 792 E = . eV) available. We calculate the mobility ratio between double δ -doped QW's and simple δ -doped QW based on a phenomenological formula. We find the optimum interlayer distance between wells for maximum mobility for three impurity concentrations, which can be of great importance for technological applications.

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Thomas-Fermi approximation inp-type δ-doped quantum wells of GaAs and Si

Cited by 44 publications

References 20 publications

Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

Electronic properties ofδ-doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method

Thomas–Fermi–Dirac calculations of valence band states in two p‐type delta‐doped ZnSe quantum wells

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