Thomas–Fermi–Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells

Rodrı́guez-Vargas, I.; Gaggero‐Sager, L. M.; Velasco, V.R.

doi:10.1016/s0039-6028(03)00546-6

Cited by 36 publications

(20 citation statements)

References 15 publications

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“…For the mobility calculations we implement an empirical formula previously proposed and applied to n, p and p-n delta-doped systems [12,14,15],…”

Section: Mathematical Methodsmentioning

confidence: 99%

“…The Thomas-Fermi approximation and the effective mass theory are combined to obtain the confining potential and the electron subband levels. The mobility calculations are performed via an empirical formula previously proposed and applied to n, p, and p-n delta-doped systems [12,14,15]. We find that the electron confinement plays an important role to improve the mobility.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electron Subband Structure and Mobility Trends in P-N Delta-Doped Quantum Wells in Si

Ariza-Flores

Rodrı́guez-Vargas²

2008

PIER Letters

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Abstract-We present the electronic spectrum of a n-type deltadoped quantum well in Si coupled to a p-type delta-doped barrier within the envelope function effective mass approximation. We applied the Thomas-Fermi approximation to derive an analytical expression for the confining potential, and thus, we obtain the electronic structure in a simple manner. We analyzed the electron subband structure varying the distance between the doping planes (l) as well as the impurity density in them (n 2D , p 2D ). We also study the mobility trends through an empirical formula that is based on the electron levels, the electron wave functions and the Fermi level. We find a monotonic decrease in the mobility as the p-type barrier moves away from the n-type well, and optimum parameters, l = 70Å and n 2D = 5 × 10 12 cm −2 and p 2D = 5 × 10 13 cm −2 , for maximum mobility.

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“…For the mobility calculations we implement an empirical formula previously proposed and applied to n, p and p-n delta-doped systems [12,14,15],…”

Section: Mathematical Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electron Subband Structure and Mobility Trends in P-N Delta-Doped Quantum Wells in Si

Ariza-Flores

Rodrı́guez-Vargas²

2008

PIER Letters

View full text Add to dashboard Cite

show abstract

“…For the mobility calculations we implement an empirical formula previously proposed and applied to n, p and p-n delta-doped systems [5,7,8],…”

Section: Mathematical Methodsmentioning

confidence: 99%

“…The ThomasFermi approximation and the effective mass theory are used in order to obtain the confining potential and the electron subband levels, respectively. Meanwhile the mobility calculations are performed via an empirical formula previously proposed and applied to n, p, and p-n delta-doped systems [5,7,8]. We find that the electron confinement plays an important role to optimize the mobility.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of the Electronic Confinement Improves the Mobility in P-N-P Delta-Doped Quantum Wells in Si

Ariza-Flores¹,

Rodrı́guez-Vargas²

2008

PIER Letters

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Abstract-The electronic structure and mobility trends in a n-type delta-doped quantum well in Si, matched between p-type delta-doped barriers of the same material, is presented. The distance between the n-type well and p-type barriers is varied from 50Å to 500Å; and also the impurity density from 5 × 10 12 cm −2 to 5 × 10 13 cm −2 , for both, donors and acceptors. An increase in the mobility by a factor of 1.6 at interwell distance of 50Å with donor and acceptor concentrations of 5 × 10 12 cm −2 and 5 × 10 13 cm −2 compared with a single delta-doped well without p-type barriers is found. This improvement in mobility could be attributed to a better confinement of carriers, which favors excited levels with nodes in the donor plane. This trade-off between carrier concentration and mobility could be exploited in high-speed, high-power and high-frequency applications.

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“…The Coulomb scattering potential due to the ionized impurities is considered as distributed randomly in the doped layer. Finally, we take the ratio of the mobility [34]:…”

Section: Transport Propertiesmentioning

confidence: 99%

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Oubram¹,

Gaggero‐Sager²,

Bassam³

et al. 2010

PIER

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Abstract-The objective of this work is to analyze electronic transport phenomena, due to ionized impurity scattering in δ-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor). In this work, we report theoretical results for electronic transport in a delta-MIGFET using the device electronic structure and analytical expression of mobility and conductivity. The results show that the analytical mobility and conductivity are a good way to analyze transport in this device. We find the relative mobility as a linear and increasing function in different modes; also, we find transconductance as an almost flat function in all the evaluated interval. Finally, we analyze the differential capacitance and resistivity, and we report regions where this device is operating in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of this device in symmetrical mode.

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Thomas–Fermi–Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells

Cited by 36 publications

References 15 publications

Electron Subband Structure and Mobility Trends in P-N Delta-Doped Quantum Wells in Si

Electron Subband Structure and Mobility Trends in P-N Delta-Doped Quantum Wells in Si

Enhancement of the Electronic Confinement Improves the Mobility in P-N-P Delta-Doped Quantum Wells in Si

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

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