Time-resolved two-dimensional (2D) profiles of electron density (n e ) and electron temperature (T e ) of extreme ultraviolet (EUV) lithography light source plasmas were obtained from the ion components of collective Thomson scattering (CTS) spectra. The highest EUV conversion efficiency (CE) of 4% from double pulse lasers irradiating a Sn droplet was obtained by changing their delay time. The 2D-CTS results clarified that for the highest CE condition, a hollow-like density profile was formed, i.e., the high density region existed not on the central axis but in a part with a certain radius. The 2D profile of the inband EUV emissivity (η EUV ) was theoretically calculated using the CTS results and atomic model (Hullac code), which reproduced a directly measured EUV image reasonably well. The CTS results strongly indicated the necessity of optimizing 2D plasma profiles to improve the CE in the future.Extreme-ultraviolet lithography is a promising technology for high-volume manufacturing of next-generation semiconductor devices [1][2][3] . A carbon dioxide (CO 2 ) drive laser and a tin droplet target are used as an efficient extreme-ultraviolet (EUV) light source 4,5 . One of the primary challenges involves the improvement of the conversion efficiency (CE) from laser energy to in-band EUV energy at a wavelength of λ = 13.5 nm (2% full-bandwidth) 5,6 . Debris reduction is also a crucial problem for commercial usage 7 . Therefore, mass-limited targets, such as small tin droplets with a diameter on the order of 20 μm, have been introduced 8 . However, it is desirable to have a large EUV plasma volume within the etendue limits to achieve a large EUV emission 9 . A double-pulse irradiation scheme is proposed, where a pre-pulse laser expands a small tin droplet, and the main laser irradiates when it reaches a size of approximately 300 μm in diameter 7,8 . A CE of approximately 4% was confirmed using this approach 5 .A strong correlation has recently been shown between the laser absorption and the CE by changing the delay time between the pre-and main-pulse lasers 10 . However, the reported CE was approximately 2% at the highest. The EUV emissivity strongly depends on plasma parameters, such as electron density (n e ), electron temperature (T e ), and average ion charge state (Z) [11][12][13] . Hence, we developed a collective Thomson scattering (CTS) system to measure these parameters [14][15][16] . In our previous study, it was confirmed that adequate n e and T e were achieved in the EUV light source plasmas, but this did not provide optimum plasma conditions for high CE 17 .This paper determined for the first time that it is important to generate a plasma with an optimal two-dimensional (2D) structure to achieve a large EUV conversion efficiency by adding theoretical analysis to