Thomson Scattering from Ultrashort and Ultraintense Laser Pulses

Gao, Ju

doi:10.1103/physrevlett.93.243001

Cited by 63 publications

(75 citation statements)

References 15 publications

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“…The most fundamental illustrative cases are the nonlinear Thomson and Compton scattering, which in the cleanest way show some general basic characteristics of the nonlinear photon-electron interactions (see e.g. Brown & Kibble (1964), Leubner (1978Leubner ( , 1981, Bergou & Varró (1981b), Gao (2004), Lan et al (2007), Boca & Florescu (2009), Mackenroth et al (2010). According to the description displayed in cell No.…”

Section: Classical Description Of Basic Strong Field Phenomena Carrimentioning

confidence: 99%

Intensity Effects and Absolute Phase Effects in Nonlinear Laser-Matter Interactions

Varró¹

2010

Laser Pulse Phenomena and Applications

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Section: Classical Description Of Basic Strong Field Phenomena Carrimentioning

confidence: 99%

Intensity Effects and Absolute Phase Effects in Nonlinear Laser-Matter Interactions

Varró¹

2010

Laser Pulse Phenomena and Applications

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“…The screening theory has been applied, with reasonable qualitative success, to explain the temperature and density [3,5,6] dependence as well the parallel magnetic field dependence [7] of the 2D "metallic" resistivity [3,5]. Motivated by a puzzling recent experimental observation [8], we develop in this Letter the first theory, based on the screening model, for the temperature dependence of the weak-field Hall resistance in dilute 2D carrier systems. Our theory is in excellent qualitative agreement with the experimental results [8] on the temperature dependence of the weak field Hall resistance although quantitative discrepancies remain.…”

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confidence: 99%

“…[10], and recently, in ref. [8]. The interaction theory makes [10] very specific (and falsifiable) predictions about the connection between the (leading-order) temperature corrections to 2D conductivity δσ(T ) and Hall resistivity δρ H (T ) where ρ H (T ) = ρ 0 H + δρ H (T ) with ρ 0 H ≡ ρ H (T → 0).…”

mentioning

confidence: 99%

“…The predicted connection between δσ(T ) and δρ H (T ), which has been discussed in detail with exemplary clarity in refs. [8] and [10], arises from the fact that in the interaction theory both of these temperature corrections are controlled by the same Fermi liquid parameters, and as such, a detailed and careful measurement of σ(T ) at low temperatures necessarily completely determines the low-temperature behavior of ρ H (T ) in the same sample. Gao et al carried out [8] such a comparison between ρ H (T ) and σ(T ) using the interaction theory [10] in an extremely high-quality 2D p-GaAs hole system which is metallic at extraordinary low densities down to 10 10 cm −2 (where the 2D hole system should be very strongly interacting, making it a perfect system for testing the internal consistency of the interaction theory).…”

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confidence: 99%

“…The outcome as detailed in ref. [8] is a spectacular qualitative failure of the interaction theory: In the density range studied [8] by Gao et al the Fermi liquid parameters extracted from their experimental σ(T ) data should lead to, according to the interaction theory results of ref. [10], essentially a constant temperatureindependent ρ H (T ) except at the lowest temperature the interaction theory predicts a small (less than 1%) increase in ρ H (T ) with increasing temperature, whereas Gao et al find a smooth decrease (∼ 20%) in ρ H (T ) with increasing temperature as T varies from 100 mK to 1K.…”

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Temperature Dependent Weak Field Hall Resistance in Two-Dimensional Carrier Systems

Sarma¹,

Hwang²

2005

Phys. Rev. Lett.

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Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers. The temperature dependent 2D Hall coefficient shows striking non-monotonicity in strongly screened systems, and in particular, we qualitatively explain the recent puzzling experimental observation of a decreasing Hall resistance with increasing temperature in a dilute 2D hole system. We predict that the impurity scattering limited Hall coefficient will eventually increase with temperature at higher temperatures. PACS Number : 71.30.+h; 73.40.Kp; 73.40.Qv The behavior and the properties of the apparent two dimensional (2D) "metallic" phase continue to attract substantial attention [1] from experimentalists and theorists alike, even a decade after its original discovery [2]. In particular, the original observations on the strong metallic (i.e. dρ/dT > 0) temperature dependence of the 2D resistivity, ρ(T ), where the resistivity may increase by as much as a factor of 3 − 4 for a modest increase in temperature (e.g. T = 100mK − 3K) were followed by intriguing observations of large magnetoresistance in an applied parallel magnetic field. Phenomenologically the observed "metallicity", defined as the maximum temperature induced enhancement of ρ(T ), exhibits strong system dependence, with 2D p-GaAs hole system being the most metallic and 2D n-GaAs electron system being the least metallic with the 2D Si-based electron systems having intermediate metallicity. This system-dependent variation can be understood on the basis of our theoretical prediction [3] that the metallicity arises from 2D screening properties, and is therefore controlled in the zeroth order theoretical prescription by the dimensionless parameters q T F /2k F and T /T F , where q T F , k F , T F are respectively 2D Thomas-Fermi screening wave vector, the Fermi wave vector, and the Fermi temperature [4]. Since q T F /2k F ∝ mn −1/2 and T /T F ∝ mn −1 in 2D, the metallicity increases with increasing (decreasing) carrier effective mass m (carrier density n). This is why metallicity is stronger at lower carrier densities and/or in higher effective mass semiconductor systems.The idea [5] of the strongly temperature dependent screened charged impurity effective disorder being the qualitative reason underlying the striking metallic behavior of dilute 2D carrier systems has come to be known as the "screening theory" since the screening-induced regularization of the bare Coulombic impurity disorder (in contrast to zero-range white noise disorder) intrinsic to semiconductor systems is the crucial physical mechanism in this theory. The screening theory has been applied, with reasonable qualitative success, to explain the temperature and density [3,5,6] dependence as well the parallel magnetic field dependence [7] of the 2D "metallic" resistivity [3,5]. Motivated by a puzzling recent experimental observation [8], we develop in th...

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