Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs)

Kumar, T.; Balamurugan, N. B.

doi:10.1007/s10825-020-01498-2

Cited by 3 publications

(1 citation statement)

References 20 publications

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“…In the Asymmetric Silicon wafer DG-HEMT, the potential well or 2DEG is formed in the direction perpendicular to the interface of AlInSb and InSb layers because of its bandgap difference and ionized electrons are transferred from δ doped layer to InSblayer [5]. The transferred electrons are accumulated in the narrow bandgap material (InSb),so it is called potential well or two-dimensional electron gas (2DEG) [6].…”

Section: Introductionmentioning

confidence: 99%

Charge Density Based Small Signal Modeling for InSb/AlInSb Asymmetric Double Gate Silicon Substrate HEMT for High Frequency Applications

Kumar¹,

Venkatesh

Muthupandian³

et al. 2021

Silicon

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The Asymmetric Double Gate Silicon Substrate HEMT(ADG-Si-HEMT) is proposed in this article to analyse the carrier concentration and intrinsic small signal parameters for the heterostructure of the InSb/AlInSb silicon wafer DG-HEMT device. When the top and bottom gates are biased with different gate voltages, the HEMTs act as a three-port system and the device called Asymmetric Double Gate HEMT. The modulation of back-channel charge density due to the front gate voltage is analyzed with the position of quasi-Fermi energy levels(Ef). Also, the small signal model is obtained for various parameters like cut off frequency, gate to source capacitance and transconductance. The effects of the following parameters like delta doping, width of Silicon doping layer and various top and bottom gate voltages are analyzed to get enhanced device operation. The transconductance 2390 Sm/mm for Vfg=0.2V and cut off frequency around 197 GHz for Vbg=0.3 are obtained. All the analytical results are compared with Sentaurus 3-D TCAD simulation results. The asymmetric biasing technique offers various mixed application due to modulation in threshold voltage and modulating carrier density in dual channels.

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Section: Introductionmentioning

confidence: 99%

Charge Density Based Small Signal Modeling for InSb/AlInSb Asymmetric Double Gate Silicon Substrate HEMT for High Frequency Applications

Kumar¹,

Venkatesh

Muthupandian³

et al. 2021

Silicon

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Numerical Investigation of Zero-Dimensional Freestanding Nanowire FER-AlGaN/GaN HEMTs for Low-Power Applications

Raj Kumar,

Balamurugan,

Suguna

et al. 2024

Arab J Sci Eng

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Acoustic resonances in concentric and eccentric cylindrical semiconductor nanowires within a two-fluid hydrodynamic model

Shi

Dong

2021

J. Opt. Soc. Am. B

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A two-fluid hydrodynamic model is employed to model the spatial dispersion when both electrons and holes in semiconductors are considered. Within the two-fluid hydrodynamic model, analytical solutions to the nonlocal responses of cylindrical multilayered concentric and eccentric nanowires are obtained using the Mie theory and the scattering matrix method, which are also validated by finite element simulations. It is demonstrated that the greater the geometric asymmetry is, the stronger the acoustic resonance peaks in the extinction cross section spectra will be. In addition, charge distributions of nanowires are investigated, which reveal versatile resonance modes. We believe the proposed analytical approach provides a fast and accurate tool to rapidly analyze and optimize the optical responses of cylindrical multilayered plasmonic devices.

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Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs)

Cited by 3 publications

References 20 publications

Charge Density Based Small Signal Modeling for InSb/AlInSb Asymmetric Double Gate Silicon Substrate HEMT for High Frequency Applications

Charge Density Based Small Signal Modeling for InSb/AlInSb Asymmetric Double Gate Silicon Substrate HEMT for High Frequency Applications

Numerical Investigation of Zero-Dimensional Freestanding Nanowire FER-AlGaN/GaN HEMTs for Low-Power Applications

Acoustic resonances in concentric and eccentric cylindrical semiconductor nanowires within a two-fluid hydrodynamic model

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