Three-Dimensional Atomic Force Microscopy for Sidewall Imaging Using Torsional Resonance Mode

Liu, Lu; Xu, Jian; Zhang, Rui; Wu, Sen; Hu, Xiaodong; Hu, Xiaotang

doi:10.1155/2018/7606037

Cited by 4 publications

(2 citation statements)

References 22 publications

(19 reference statements)

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“…3D-AFM is used for high-resolution sidewall imaging, overhang profiles, and critical angle measurements. The tilted z-scan XY and z-scan systems overcome the challenges of conventional and flaps in accurate wellbore analysis [ 418 ]. Three-dimensional atomic force microscopy (3D-AFM) or critical size atomic force microscopy (CD-AFM) techniques can be used for in-line monitoring and engineering analysis.…”

Section: Advanced Characterizations For Ultra-miniaturized Cmosmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

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Section: Advanced Characterizations For Ultra-miniaturized Cmosmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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“…But the tilting angle of probe is limited to a confined range which is inversely proportional to the aspect ratio of the trenches. Another solution for CD measurement based on AFM is to develop probes with a special shape, commonly called CD probes [9][10][11][12]. Unlike the conventional cone-shaped tip, the tip of CD probes may have multiple protrusions used for sensing both top-bottom features and sidewalls.…”

Section: Introductionmentioning

confidence: 99%

Adaptive-angle scanning method for 3D measurement with atomic force microscopy

Zhang¹,

Wu²,

Liu³

et al. 2019

Meas. Sci. Technol.

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Three-dimensional atomic force microscopy (3D-AFM) plays a critical role in true 3D measurement, which is potentially required in the manufacture of integrated circuits and in materials science. However, obtaining a 3D profile from a single scan is still a challenge because the probe has to be adjusted to a proper state to measure unknown features. So 3D-AFM is usually time consuming due to repeated scanning in the same area. Here we propose a new scanning strategy, called adaptive-angle scanning, in which the approaching angle of the probe is updated to an appropriate value according to the local surface gradient that is estimated in real time. Meanwhile, the fast scan direction is switched between the y -axis and the z-axis to realize the measurement of top-bottom features and sidewalls. This method is incorporated in a homemade 3D-AFM system to demonstrate its application. Two feedback loops, one integrated in the AFM head and the other under the sample stage, are responsible for changing the approach angle. Experiments are carried out on some standard samples with a tailored CD probe. The 3D-AFM system performs with excellent repeatability on the measurement of the line structure. There is no obvious tip wear observed after continuously scanning 20 times, and the obtained 3D images validate well the method's capability of measuring different structures.

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