Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for $V_{T}$ and Subthreshold Slope

Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

“…This movement of the most leaky path within the channel cross-section must be taken into account in deriving the drain current equation in short TG FinFETs [14]. Adopting that in TG MOSFETs in weak inversion the most leaky path is located at the middle of the bottom surface of the channel for x = H fin and z = W fin /2 [10] and based on the potential distribution presented in [11], the threshold voltage of the lightly doped symmetric DG MOSFET can be expressed as follows [15]:…”

“…Little work has been done towards the development of analytical expression for the threshold voltage of TG MOSFETs which is usually not fully analytical [9,10], whereas no experimental data were used to verify its validity. In this work, we develop a fully analytical model for the threshold voltage of lightly doped TG MOSFETs, which is compared with experimental results showing excellent agreement.…”

Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs

“…To solve the problem, some new types of MOSFET have been proposed and studied, such as double-gate (DG) MOSFETs [1][2][3][4][5], FinFET [6], and surrounding-gate (SG) MOSFETs [7][8][9][10][11][12]. In addition, the fabrication processes of the SG device have been presented in [11,12].…”

Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs

“…To solve these problems, some new types of MOSFET have been proposed and studied, such as double-gate (DO) MOSFETs [I-5], FinFETs [6], and SO MOSFETs [7-1O].…”