2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2014
DOI: 10.1109/ltb-3d.2014.6886142
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Three dimensional dynamic random access memory

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Cited by 3 publications
(2 citation statements)
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“…With the development of innovative memories, emerging memory technologies such as non-volatile memory [1], [2], 3D-stacked [3], [4], memory have been integrated into the memory system, thus effectively complemented traditional DRAM. For example, the Intel Knight Landing (KNL) processor [5] incorporates high bandwidth memory (HBM) into the processor, which achieves much higher bandwidth than DRAM when the application exhibits high parallelism and sequential access.…”
Section: Introductionmentioning
confidence: 99%
“…With the development of innovative memories, emerging memory technologies such as non-volatile memory [1], [2], 3D-stacked [3], [4], memory have been integrated into the memory system, thus effectively complemented traditional DRAM. For example, the Intel Knight Landing (KNL) processor [5] incorporates high bandwidth memory (HBM) into the processor, which achieves much higher bandwidth than DRAM when the application exhibits high parallelism and sequential access.…”
Section: Introductionmentioning
confidence: 99%
“…1 illustrates a high-performance system based on 3DI technologies, where the two key elements are: a high-performance micro-processor (µP) chip stacked over a high-density cache memory, and the high-density lowpower DRAM stacks supporting the µP. [5] Two early prototypes [6,7], were developed to demonstrate 3D cache feasibility and evaluate TSV processing [8] by stacking two embedded DRAM (eDRAM) chips. Compared with chip-tochip 3DI, wafer-scale 3DI offers a high-volume low-cost production solution to achieve these benefits.…”
Section: Introductionmentioning
confidence: 99%