Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches

Abstract

The miniaturization trend leads to the development of a graphene based nanoelectromechanical (NEM) switch to fulfill the high demand in low power device applications. In this article, we highlight the finite element (FEM) simulation of the graphene-based NEM switches of fixed-fixed ends design with beam structures which are perforated and intact. Pull-in and pull-out characteristics are analyzed by using the FEM approach provided by IntelliSuite software, version 8.8.5.1. The FEM results are consistent with the published experimental data. This analysis shows the possibility of achieving a low pull-in voltage that is below 2 V for a ratio below 15:0.03:0.7 value for the graphene beam length, thickness, and air gap thickness, respectively. The introduction of perforation in the graphene beam-based NEM switch further achieved the pull-in voltage as low as 1.5 V for a 250 nm hole length, 100 nm distance between each hole, and 12-number of hole column. Then, a von Mises stress analysis is conducted to investigate the mechanical stability of the intact and perforated graphene-based NEM switch. This analysis shows that a longer and thinner graphene beam reduced the von Mises stress. The introduction of perforation concept further reduced the von Mises stress at the graphene beam end and the beam center by approximately ~20–35% and ~10–20%, respectively. These theoretical results, performed by FEM simulation, are expected to expedite improvements in the working parameter and dimension for low voltage and better mechanical stability operation of graphene-based NEM switch device fabrication.

A review on applications of graphene in triboelectric nanogenerators

“…These excellent properties enable graphene to be considered as highly potential materials for advanced technology application in countless areas. 16,133,134 Graphene has been extensively studied as an ideal material in smart futures materials in batteries, fuel cells, supercapacitors, solar cells, photodetectors, light emitting diodes (LEDs) as well as nanogenerators. 46 In contrast to others carbon families for example, Carbon Nanotubes (CNTs, fullerene, diamond, activated carbon, and graphite, 46 graphene has the advantages of good electronic/mechanical properties and can be subjectively synthesized into various macroscopic forms (eg, 0D graphene quantum dots, 1D graphene fiber, 2D graphene film, and 3D graphene foam).…”

Graphene rotational switch through vacancy defect and nitrogen doping

“…NEMS switches are recommended for low power consumption, high on‐off ratio, and reduction of leakage current in devices, and are also used in logic circuits, data storage and high frequency communication [22]. There are two ways to make NEMS switches: in one mode both ends of the structure are fixed and in the other mode one end of the structure is fixed and the other side is movable [23, 24] such that this method has been used in this study to make the switch. In the current study, this method has been used to make the proposed GRS.…”

Peranti Suis Sistem Nanoelektromekanikal (NEMS) Berunsurkan Grafin dan Tiub Nano Karbon (CNT)

“…Seterusnya, penemuan tersebut menyebabkan penganugerahan hadiah Nobel kepada mereka pada tahun 2010. Bukan itu sahaja malah penemuan tersebut menarik perhatian para penyelidik, saintis dan jurutera seluruh dunia kerana sifatnya yang unggul misalnya modulus Young yang tinggi ~1 TPa (Geim & Novoselov 2007), mobiliti elektron yang melebihi ~200,000 cm 2 /V.s (Bolotin et al 2008;Zulkefli et al 2016), ketebalan yang sangat nipis ~0.335 nm, rintangan yang rendah ~1 μΩ-cm (Liu et al 2014) dan keupayaan membawa arus elektrik yang cemerlang ~10 8 A/cm 2 (Murali et al 2009). Oleh kerana sifat yang dinyatakan dan kewujudan grafin yang stabil dalam keadaan mandiri, grafin adalah salah satu calon bahan yang sesuai untuk memfabrikasi suis NEM yang berprestasi tinggi daripada segi ketahanan mekanikal yang lebih baik serta voltan operasi yang rendah (Shi et al 2012) lantas boleh mengurangkan masalah yang dihadapi oleh suis konvensional semikonduktor.…”

“…Modulus Young bagi beberapa bahan adalah antara ratusan GPa untuk silikon (Hopcroft et al 2010) dan silikon karbida kepada 1 TPa untuk CNT (Peng et al 2008) dan grafin (Zulkefli et al 2016) (Jadual 1). Seperkara lagi, rintangan kekerasan dan haus untuk kedua-dua unsur aktif dan bahan elektrod juga akan menjadi semakin penting untuk prestasi dan kebolehharapan jangka panjang (Jang et al 2008a).…”

“…Pengenalan struktur berlubang dijangka akan mengurangkan tekanan sisa biaksial dan kekukuhan rusuk grafin seterusnya menyumbang kepada RAJAH 5. Suis NEM berstruktur hujung terkapit berasaskan rasuk grafin berlubang dalam keadaan mod-buka (Zulkefli et al 2017) Selain daripada itu, cabaran untuk mengintegrasikan suis NEM dan CMOS merupakan salah satu faktor yang penting dalam menghasilkan peranti berprestasi tinggi. Terdapat tiga keperluan utama suis NEM dalam peranti hibrid iaitu mengekalkan voltan penarikan yang rendah, memberi prestasi yang kukuh dan konsisten selepas banyak kitaran penarikan dan juga cukup kecil untuk beroperasi pada tahap yang tinggi.…”