Three-dimensional finite-element thermal simulation of GaN-based HEMTs

Bertoluzza, Fulvio; Delmonte, Nicola; Menozzi, Roberto

doi:10.1016/j.microrel.2009.02.009

Cited by 76 publications

(33 citation statements)

References 4 publications

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“…In a final step, the device transient thermal impedance ′ is extracted using (eq.4). The results are shown in figure 3 from 1.6 µs to 160 ms. At 1.6 µs, temperature has already risen to nearly half of the steady-state value which is coherent with literature to the authors knowledge [15][16]. Another HEMT from the same process batch 5…”

Section: B Extensive Results and Analysissupporting

confidence: 88%

Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement

Cutivet

Cozette

Bouchilaoun

et al. 2017

IEEE Electron Device Lett.

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This paper reports on a new method for the characterization of transistors transient self-heating based on gate end-to-end resistance measurement. An alternative power signal is injected to the device output (between drain and source) at constant gate-to-source voltage. The dependence of gate resistance with temperature is used to extract the thermal impedance of the device in frequency domain via electrical measurement. This new method is validated on common-gate AlGaN/GaN high-electron-mobility transistors on Si substrate under different experimental conditions, which demonstrates its potential to provide complete dynamic self-heating models for power transistors.

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Section: B Extensive Results and Analysissupporting

confidence: 88%

Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement

Cutivet

Cozette

Bouchilaoun

et al. 2017

IEEE Electron Device Lett.

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“…An example of device design guidelines provided by 3D FE simulations is shown in Fig. 4 [8]. The importance of considering top-side heat spreading and heat removal due to metal lines and contacts is shown in Fig.…”

Section: Device-level Finite-element Thermal Modelingmentioning

confidence: 99%

Thermal and electro-thermal modeling of components and systems: A review of the research at the University of Parma

et al. 2015

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, in the field of thermal and electrothermal modeling of devices, device and package assemblies, circuits, and systems encompassing active boards and heat-sinking elements. This activity includes: (i) Finite-Element 3D simulation for the thermal analysis of a hierarchy of structures ranging from bare device dies to complex systems including active and passive devices, boards, metallizations, and air-and water-cooled heat-sinks, and (ii) Lumped-Element thermal or electro-thermal models of bare and packaged devices, ranging from purely empirical to strictly physics-and geometry-based.

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“…Thus, there is a great need to more extensively characterize the transient temperature rise in GaN HEMTs under transient power dissipation. Although transient thermal modeling using finite element analysis (FEA) techniques can provide useful channel temperature predictions under pulse DC bias conditions [19]- [21], validating thermal models with temperature measurements as close to the channel as possible is critical.…”

Section: Introductionmentioning

confidence: 99%

Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

Bagnall

Saadat

Joglekar

et al. 2017

IEEE Trans. Electron Devices

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Three-dimensional finite-element thermal simulation of GaN-based HEMTs

Cited by 76 publications

References 4 publications

Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement

Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement

Thermal and electro-thermal modeling of components and systems: A review of the research at the University of Parma

Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

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