Three-dimensional imaging and tilt-angle analysis of dislocations in 4H-SiC by two-photon-excited band-edge photoluminescence

Tanuma, Ryohei; Nagano, Masahiro; Kamata, Isaho; Tsuchida, Hidekazu

doi:10.7567/apex.7.121303

Cited by 30 publications

(27 citation statements)

References 27 publications

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“…In the previous studies of SiC, defect characterization by, for example, crystallographic phase analysis and dislocation imaging, was performed. [26][27][28] The obtained results indicate that this method can be considered useful for characterizing the defects in GaN. Moreover, this method is more suitable for GaN than for SiC.…”

mentioning

confidence: 73%

Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence

Tanikawa

Ohnishi

Kanoh

et al. 2018

Appl. Phys. Express

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The three-dimensional imaging of threading dislocations in GaN films was demonstrated using two-photon excitation photoluminescence. The threading dislocations were shown as dark lines. The spatial resolutions near the surface were about 0.32 and 3.2 µm for the in-plane and depth directions, respectively. The threading dislocations with a density less than 108 cm−2 were resolved, although the aberration induced by the refractive index mismatch was observed. The decrease in threading dislocation density was clearly observed by increasing the GaN film thickness. This can be considered a novel method for characterizing threading dislocations in GaN films without any destructive preparations.

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mentioning

confidence: 73%

Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence

Tanikawa

Ohnishi

Kanoh

et al. 2018

Appl. Phys. Express

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“…The TEDs are inclined at 30° (the TED [0001] side of the BPD) and at 60° (the TED [0001 ] side of the BPD) from the c-axis which we have not so far observed, even compared to the inclined TEDs reported before. 31 Since the SXRT image is expected to be unclear for the inclined TEDs from the principle of the SXRT, 32 that might be the reason that the SXRT in Fig. 3c is invisible.…”

Section: Resultsmentioning

confidence: 99%

Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes

Ota

Nishio

Okada

et al. 2021

J. Electron. Mater.

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A triangular single Shockley stacking fault (1SSF) in 4H-SiC, expanding from the surface to the substrate/epilayer interface, was investigated. The triangular 1SSF was observed during electroluminescence examination of PIN diodes that had line-andspace anodes with open windows. The threshold current density of the 1SSF expansion was comparatively intermediate, and differed from that of a 1SSF that expanded from a basal plane dislocation (BPD) that had penetrated from the substrate into the epilayer, and from that of a 1SSF that expanded from a BPD that had converted into threading edge dislocations (TEDs) at the substrate/epilayer interface. No BPDs or surface damage such as cracks were observed by photoluminescence imaging, synchrotron x-ray topography imaging, or scanning electron microscope imaging near the origin of the expansion region. High-resolution observation using cross-sectional transmission electron microscopy showed that a partial dislocation (PD) was present on the basal plane and two inclined TEDs were present on both sides of the PD. A g•b analysis showed that this dislocation had a Burgers vector of ± (1/3) [1120], and it was estimated to be a combination of a TED-BPD-TED structure with a short BPD before expansion. Therefore, the triangular 1SSF from the surface side can be explained to have expanded from this BPD. Furthermore, considering the possibility of the BPD-TED conversion at the epitaxial growth process, the TED-BPD-TED dislocation was speculated to have formed after epitaxial growth. The perfect control of the forward voltage degradation of 4H-SiC device is thought to be realized by focusing on this type of BPD.

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“…Direct observation of the 3D motion of dislocation propagation will provide an important insight to control the quality of diamond. Recently, a nondestructive technique to characterize TDs using two‐photon‐excited photoluminescence (2PPL) has been demonstrated for 4H‐SiC and GaN crystals . By analyzing the band‐edge‐excited photoluminescence caused by 2PPL using a long‐wavelength laser (photon energy smaller than the band gap of materials), spatially resolved “dark spots” derived from carrier recombination near dislocations could be captured.…”

Section: D Imaging Of Dislocation Propagation By Two‐photon‐excited mentioning

confidence: 99%

Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

Ohmagari

Yamada

Tsubouchi

et al. 2019

Physica Status Solidi (a)

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A major obstacle limiting diamond electronics is dislocations, which deteriorate device properties. As threading dislocations (TDs) are normally inherited from the substrate to the epitaxial layer, control and annihilation of their propagation are important. Herein, metal-assisted termination (MAT), in which the propagation of dislocations is suppressed by in situ metal doping, is proposed. Heavy W doping is realized by a hot-filament (HF) chemical vapor deposition (CVD) using heated wires at a high temperature of >2400-K. A large reduction of TD density is confirmed by cathodoluminescence studies and etch-pit analysis. The impact of dislocation reduction is investigated electrically. After insertion of the MAT buffer layer, Schottky barrier diodes (SBDs) show improved rectifying action and highly uniform characteristics even when substrates with high dislocation densities (mosaic and heteroepitaxial wafers) are used. The 3D structure of dislocation propagation is successfully captured by two-photon-excited photoluminescence (2PPL) imaging of Band-A luminescence. The 2PPL Band-A luminescence (without band-edge excitation) shows high spatial resolution in the depth direction. An abrupt decrease in TD density is captured for heteroepitaxial substrates with an inserted MAT buffer layer. The MAT technique provides an effective approach to realize high-performance diamond electronics.

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Three-dimensional imaging and tilt-angle analysis of dislocations in 4H-SiC by two-photon-excited band-edge photoluminescence

Cited by 30 publications

References 27 publications

Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence

Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence

Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes

Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

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