2023
DOI: 10.1007/s12274-023-6120-1
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Three-dimensional macroscopic absorbents: From synergistic effects to advanced multifunctionalities

Shijie Zhang,
Di Lan,
Xingliang Chen
et al.
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Cited by 38 publications
(3 citation statements)
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“…The RL min values steadily move to lower frequencies as the thickness rises, as seen in Figure S20 (Supporting Information). Equation () can be used to describe it: [ 80,81 ] tmbadbreak=nλ4goodbreak=nc4fm||ur||εr()ngoodbreak=1,3,5$$\begin{equation}{t}_m = \frac{{n\lambda }}{4} = \frac{{nc}}{{4{f}_m\sqrt {\left| {{u}_r} \right|\left| {{\varepsilon }_r} \right|} }}\left( {n = 1,3,5\ldots} \right)\end{equation}$$…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The RL min values steadily move to lower frequencies as the thickness rises, as seen in Figure S20 (Supporting Information). Equation () can be used to describe it: [ 80,81 ] tmbadbreak=nλ4goodbreak=nc4fm||ur||εr()ngoodbreak=1,3,5$$\begin{equation}{t}_m = \frac{{n\lambda }}{4} = \frac{{nc}}{{4{f}_m\sqrt {\left| {{u}_r} \right|\left| {{\varepsilon }_r} \right|} }}\left( {n = 1,3,5\ldots} \right)\end{equation}$$…”
Section: Resultsmentioning
confidence: 99%
“…Metal organic frameworks (MOFs) can serve as ideal templates for promising EMA materials because of their abundant interfaces and defects, high porosity, and highly regular topology. [19][20][21] However, the poor electrical conductivity of single MOF-based materials restricts the free electron transfer in free space, resulting in less widespread applications. [22] Therefore, how to adjust the EMA performance of MOF materials and derivatives to obtain satisfactory absorbers has become a hot issue.…”
Section: Introductionmentioning
confidence: 99%
“…2 SiC has low density, high melting point, oxidation resistance, and adjustable dielectric properties, making it the most widely studied ceramic-based absorbing material in recent years. 3 Researchers have conducted numerous studies on the dielectric loss and absorption mechanism of SiC, including doping modification, 4,5 morphology modification, 6,7 structural design, 8,9 and component optimization. 10 However, there is a problem with the small complex permittivity and poor dielectric loss of SiC-based absorbing materials, 11 which pose challenges in achieving broadband and strong absorption.…”
Section: Introductionmentioning
confidence: 99%