Three-dimensional mask effects and source polarization impact on OPC model accuracy and process window

Saied, Mazen; Foussadier, Franck; Belledent, Jerome; Trouiller, Yorick; Schanen, Isabelle; Gardin, Christian; Urbani, Jean-Christophe; Montgomery, Patrick K.; Sundermann, Frank; Robert, Frédéric; Couderc, Christophe; Vautrin, Florent; Kerrien, G.; Planchot, Jonathan; Yesilada, Emek; Martinelli, C.; Wilkinson, Barry; Borjon, Amandine; LeCam, Laurent; Di-Maria, J. L.; Rody, Yves; Morgana, Nicolo; Farys, V.

doi:10.1117/12.715120

Cited by 3 publications

(1 citation statement)

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“…Possible contributions come from the resist model, proximity effects from metrology, uncertainties from the scanner optics such as lens apodization and lens polarization. Finally the mask characterization and the modeling of mask diffraction is eventually another important factor to OPC accuracy [15,17].…”

Section: Introductionmentioning

confidence: 99%

Rigorous simulation study of mask gratings at conical illumination

Köhle¹

2007

SPIE Proceedings

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For immersion technology the mask is illuminated under large angles and the features sizes are approaching the illuminating wavelength. At such operating conditions, several publications have shown rigorous diffraction effects having a noticeable effect on the aerial image. For the Kirchhoff assumption, which is commonly employed in lithography simulation, the mask is assumed to be an infinity thin transparency. This assumption implies the diffracted spectrum to be independent of the incident illumination angle and no coupling between polarization states occurs. This work is a fundamental study to deepen the understanding of rigorous off-axis effects for current and future mask technologies. This paper will show simulation studies for standard attenuated-and alternating mask gratings, which look at the diffracted spectrum of a mask grating with respect to polarization orientation and off-axis angle of the illuminating wave.

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Section: Introductionmentioning

confidence: 99%

Rigorous simulation study of mask gratings at conical illumination

Köhle¹

2007

SPIE Proceedings

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Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems

Melville¹,

Rosenbluth²,

Waechter³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Articles you may be interested inAnalysis and optimization approaches for wide-viewing-angle λ/4 plate in polarimetry for immersion lithographyIn the recent past, scaling of semiconductor fabrication systems has been dominated by wavelength and numerical aperture modifications. This is now no longer the case for 193-nm immersion projection lithography (193i) systems as there are no technical paths for continued benefit from the in these areas. Instead, a range of techniques including patterning processes and system optimization are being used to push the limits of the system. This paper will review the elements that are now driving scaling for a system of fixed wavelength and numerical aperture.

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