2004
DOI: 10.1063/1.1723703
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Three-dimensional microfabrication in bulk silicon using high-energy protons

Abstract: We report an alternative technique which utilizes fast-proton irradiation prior to electrochemical etching for three-dimensional microfabrication in bulk p-type silicon. The proton-induced damage increases the resistivity of the irradiated regions and acts as an etch stop for porous silicon formation. A raised structure of the scanned area is left behind after removal of the unirradiated regions with potassium hydroxide. By exposing the silicon to different proton energies, the implanted depth and hence struct… Show more

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Cited by 79 publications
(43 citation statements)
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“…In this way, any pattern of localized damage can be built up. This feature is used to produce three-dimensional multilevel structures in bulk p-type silicon [34]. , the magnetic scan is used directly.…”
Section: Free Standing Waveguidesmentioning
confidence: 99%
“…In this way, any pattern of localized damage can be built up. This feature is used to produce three-dimensional multilevel structures in bulk p-type silicon [34]. , the magnetic scan is used directly.…”
Section: Free Standing Waveguidesmentioning
confidence: 99%
“…Recently freestanding bridges, multilevel structures, and high aspect-ratio nanotips fabricated in silicon have been demonstrated by Breese et al 9 and Teo et al 10 Typically, a finely focused MeV proton beam is selectively scanned over the silicon surface. The high energy protons penetrate the silicon substrate and stop within a well-defined range.…”
mentioning
confidence: 99%
“…Direct proton-beam irradiation is an emerging modification technique for fabricating waveguides in silicon and glass [6][7][8][9]. Figure 1 shows a schematic of the fabrication process, carried out using 250 keV protons of ϳ200 nm spatial resolution.…”
mentioning
confidence: 99%