Using a direct-write process for the production of three dimensional microstructures on a semiconductor, freestanding waveguides have been realized in silicon. The waveguides are produced by a focused beam of high energy protons that is scanned over a silicon substrate. The latent image of the scan is subsequently developed by electrochemical etching. Herein the authors report on the fabrication method as well as determining the propagation loss of these structures. Propagation loss values of 13.4 and 14.6 dB/ cm were obtained for these preliminary structures for transverse electric and transverse magnetic polarizations, respectively. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2749175͔Silicon photonics is experiencing a dramatic increase in interest due to emerging application areas and several breakthrough in device and technology development.1-5 Most conventional waveguides in silicon photonics are fabricated in the silicon-on-insulator ͑SOI͒ material system in the form of a strip or a rib waveguide. These waveguides, however, are not suitable for longer wavelengths ͑except in the 3 -3.5 m range͒ due to the absorption of the silicon dioxide insulating layer.6 Silicon-based long wave infrared photonics could find applications in several areas including sensing, communications, signal processing, missile detection, and imaging. To address these wavelengths, several different waveguide structures have been investigated such as photonic crystal, plasmon optic, hollow, and nanoslotted rib or strip waveguides. In this letter, the fabrication and propagation loss measurements of a different structure, the freestanding waveguide, are reported. As this waveguide has an air cladding, it is a viable structure for long wavelength applications.6 Alternatively, any other suitable cladding could easily be deposited to make the structures suitable for specific wavelength ranges.Proton beam writing ͑PBW͒ is an advanced lithographic technique for micromachining on the submicron scale. PBW utilizes a high energy ion microbeam to irradiate suitable resists ͓e.g., SU-8 and polymethyl methcrylate ͑PMMA͔͒. Subsequent wet etching is then employed to develop the resist. While it was initially investigated for producing latent microstructures in high molecular weight PMMA resist, Polesello et al. 7 and Mistry et al. 8 have demonstrated PBW as a method to fabricate three dimensional structures directly in Si and GaAs, respectively, thereby eliminating the need for a resist.There are several potential advantages of PBW. It is a direct-write process which eliminates the need for a potentially costly mask. Furthermore, prototype devices which require small structural modifications can be produced by simply modifying the scan of the microbeam whereas modifications to a device using photolithographic methods would require the layout and fabrication of an additional mask.A second benefit is that the protons are deposited in the semiconducting material in a well-defined range, thereby allowing for good vertical control of the fabric...