Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells

“…The LED structure is further confirmed by the TEM. The selected area diffraction patterns (SADPs) are represented in Figure 2 a, where the zone axis (ZA) is along the [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 ] direction. The MQWs’ structure is shown in Figure 2 b, where the 4× blue MQWs and 1× green QW are clear to be seen.…”

“…Indium gallium nitride (InGaN) light-emitting diodes (LEDs) are essential for high quality illumination [ 1 , 2 , 3 ] and high resolution, high brightness and fast response displays [ 4 , 5 , 6 ], thus playing an important role in lighting, high definition TV (HDTV), visual reality (VR)/augmented reality (AR) displays, etc. [ 7 , 8 ].…”

Application of patterned sapphire substrate for III-nitride light-emitting diodes

“…[13][14][15] Integration of red, green and blue (RGB) micro-LEDs has been highlighted not only for high color rendition white illumination, but for full-color displays, wearable devices, highbrightness augmented-reality (AR) and visual reality devices. [16][17][18][19] Recently, III-nitride micro-LEDs play an important role in the biomedical area, due to its outstanding biocompatibility, low heating property and stability. 20,21 Moreover, there has been unprecedented development of UV-LEDs due to potential applications in UV sensing, optical data storage, sterilization.…”

High‐Performance and Low‐Power Polycrystalline MoTe2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric

“…In recent years, semiconducting 2D materials, especially transition metal dichalcogenides (TMDs), attract extensive research interests for various applications such as advanced electronics and optoelectronics. [1][2][3][4][5][6][7] For example, substantial investigations have focused on demonstrating high-performance TMDs-based on the high quality HfAlO 2 film synthesis with the systematically optimized condition, which was determined as 0.3 m precursor concentration, 400 °C annealing temperature in the mixed gas atmosphere of 95% N 2 and 5% H 2 for 30 min. Then, with MoTe 2 patterns as conduction channel and HfAlO 2 film as dielectric, the pristine CVD-grown polycrystalline MoTe 2 TFTs were constructed, which was followed with further effort of proper postannealing treatment to improve device performance.…”

“…[4,5] Nevertheless and regrettably, other possible applicability such as TMDs-based thin film transistors (TFTs), which feature the vital applications like large-area and flexible electronics, was rarely systematically demonstrated. [6] Differing from high-performance TMDs FETs as possible alternative to silicon, low cost and simplicity of fabrication process are especially critical for applications of TMDs-based TFTs, except for their basic requirement of device performance. [1] In this regard, the technology of high-k dielectric film fabrication attracts particular concern as the key step of the TFTs fabrication process.…”