2018
DOI: 10.1016/j.commatsci.2018.09.009
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Three-dimensional pentagonal silicon: Stability and properties

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Cited by 9 publications
(2 citation statements)
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“…Computer-aided materials science has been widely used in the field of electronic materials simulation (Wang et al, 2021;Wei et al, 2023;Zhang et al, 2022) and there have been many theoretical reports on the design of new silicon materials (Lee et al, 2014;Su et al, 2022;Song et al, 2022;He et al, 2018;Fan et al, 2023;Cui et al, 2023;Wei et al, 2022;Cheng et al, 2018) based on density functional theory (Hohenberg & Kohn, 1964;Kohn & Sham, 1965). However, most of the new silicon structures still belong to the class of indirect band gap semiconductor materials (Cui et al, 2023;Wei et al, 2022;Cheng et al, 2018). Kim et al (2015) reported the discovery of a new orthorhombic silicon allotrope, Si 24 , formed through a novel high-pressure precursor process, and found that it possesses a quasi-direct band gap near 1.3 eV.…”
Section: Introductionmentioning
confidence: 99%
“…Computer-aided materials science has been widely used in the field of electronic materials simulation (Wang et al, 2021;Wei et al, 2023;Zhang et al, 2022) and there have been many theoretical reports on the design of new silicon materials (Lee et al, 2014;Su et al, 2022;Song et al, 2022;He et al, 2018;Fan et al, 2023;Cui et al, 2023;Wei et al, 2022;Cheng et al, 2018) based on density functional theory (Hohenberg & Kohn, 1964;Kohn & Sham, 1965). However, most of the new silicon structures still belong to the class of indirect band gap semiconductor materials (Cui et al, 2023;Wei et al, 2022;Cheng et al, 2018). Kim et al (2015) reported the discovery of a new orthorhombic silicon allotrope, Si 24 , formed through a novel high-pressure precursor process, and found that it possesses a quasi-direct band gap near 1.3 eV.…”
Section: Introductionmentioning
confidence: 99%
“…
recently attracted considerable research attention thanks to its low mass density (2.33 g cm −3 ), nontoxicity, and biocompatibility. [6,7] Besides, the intrinsic semiconductor and tunable on-chip characteristics enable Si to be a central platform of several applications, including optoelectronics, [8,9] microelectronics, [10] smart sensors, [11,12] solar cells, [13][14][15] and drug-delivery systems. [16] From an energy perspective, seamless integration of energy storage systems onto these Si-based functional devices is highly desirable toward portable and wearable applications, or when the power supply is intermittent.
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mentioning
confidence: 99%