Three-Dimensional Simulations with Fields and Particles in Software and Inflector Designs

Abstract

Particles and fields represent two major modeling paradigms in pure and applied science at all. In this paper, a methodology and some of the results for three-dimensional (3D) simulations that include both field and particle abstractions are presented. Electromagnetic field calculations used here are based on the discrete differential form representation of the finite elements method, while the Monte Carlo method makes foundation of the particle part of the simulations. The first example is the simulation of the feature profile evolution during SiO 2 etching enhanced by Ar + /CF 4 non-equilibrium plasma based on the sparse field method for solving level set equations. Second example is devoted to the design of a spiral inflector which is one of the key devices of the axial injection system of the VINCY Cyclotron.

Application of the Level Set Method in Three-Dimensional Simulation of the Roughening and Smoothing of Substrates in Nanotechnologies

“…Although roughness is usually undesirable, it represents complicated and very expensive to control in manufacturing. Developing integral modeling systems for realistic geometries has evolved into one of the most efficient methods for optimizing plasma processing equipment [16]- [18]. The level set methods are powerful techniques for analyzing and computing moving fronts in a variety of different cases.…”

“…Level set method has advantages as compared to the other simulation methods since it provides results much faster and with multi scale approach may give local roughness for unlimited resolution. The method have a wide range of applications, including problems in fluid mechanics, combustion, manufacturing of computer chips, computer animation, image processing and many other fields [16]- [18].…”

The Implementation of the Surface Charging Effects in Three-Dimensional Simulations of SiO<sub>2</sub> Etching Profile Evolution

“…Trench wall charging strongly influences the charged particles motion and, consequently, particle fluxes which themselves determine the local etching rates. The etching process in medium/high density fluorocarbon plasmas is believed to consist of concurrent etching (of the SiO 2 substrate in our case) and deposition (of a fluorocarbon polymer layer) phenomena [10]. Here the deposition process is neglected for the sake of simplicity.…”