Three-dimensional wavelength-scale confinement in quantum dot microcavity light-emitting diodes

Zinoni, C.; Alloing, Blandine; Paranthoën, Cyril; Fiore, Andrea

doi:10.1063/1.1791341

Cited by 29 publications

(30 citation statements)

References 13 publications

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“…First, two emission lines dominate the spectrum: the exciton (X) and biexciton (BX). As previously demonstrated [4][5][6][7][8][9], the identification follows from the power dependence of the integrated PL intensity. On average the exciton intensity is proportional to P 0.7±0.1 and the BX to P…”

Section: Resultsmentioning

confidence: 95%

Time resolved measurements on low‐density single quantum dots at 1300 nm

Zinoni¹,

Alloing

Monat

et al. 2006

Phys. Status Solidi (c)

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Published online zzz PACS 78.67. Hc, 78.66.Fd, 78.47.+p We present time integrated and time resolved measurements on single In/As quantum dots (QD) emitting at 1300nm, at 10K, embedded in a planar microcavity. We clearly identify a standard spectroscopic signature from single QDs and compare the exciton line width and biexciton (BX) binding energy for several QDs. We present this data for QDs spatially selected by etched mesas and metallic apertures. Time resolved photoluminescence (PL) from single electron-hole recombination in the ground state of the QD is investigated as a function of excitation power and temperature. The measurements reveal the presence of a background emission that delays the PL of excitons in the ground state.1 Introduction Efficient generation of single photons on demand at telecom wavelength (1310nm and 1550nm) is crucial for quantum key distribution (QKD). The optical properties of single quantum dots (QDs) have the potential for satisfying the requirements of a convenient single photon source: QDs can be grown in conventional semiconductor epitaxial systems and the nature of the 3D confinement of the wavefunction generates atomic-like spectral features. A single QD can be populated by several electron-hole pairs (excitons), each recombining to emit a photon. Due to Coulomb interactions originating from the strong charge confinement, the energy levels are shifted and each transition can be spectrally isolated to produce a single photon source. QDs that emit in the spectral range where silicon technology is used have been extensively studied [1][2][3]. However, the attenuation in optical fibers below 1270nm restricts the potential use of these QDs in QKD applications. Working with QDs emitting in the telecom window presents several challenges: first the QD emission has to be red shifted while maintaining a low spatial density-a difficult combination of requirements for conventional epitaxial growth methods. Second, the single photon detection technology for the near infrared is still in its infancy: noise levels, quantum efficiency, and temporal response are considerably poorer when compared to the single photon detection modules operating below 1000nm. Recently we have demonstrated [4] a technique for achieving ultra low areal densities (1-2 dots/µm2) and large dot sizes for emission in the 1300nm band. In combination with ultra small light-emitting diode structures [5][6], they could lead to electrically pumped single photon sources. These QDs present several distinct features, as compared to widely studied short-wavelength QDs, such as larger confinement energy, higher strain fields, and consequently different electron-hole wave functions. Time-resolved studies on single exciton transitions provide important information on the dynamics of the electron-hole relaxation into these new QDs and may change the way in which QD based single photon devices are operated. In this work we compare the photoluminescence from the ground state of the QDs spatially isolated by two different methods...

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Section: Resultsmentioning

confidence: 95%

Time resolved measurements on low‐density single quantum dots at 1300 nm

Zinoni¹,

Alloing

Monat

et al. 2006

Phys. Status Solidi (c)

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“…[ 75 ] In this device, a microcavity LED structure was combined with a submicrometre oxide aperture to achieve strong 3D confi nements of both the carrier distribution and the optical fi eld in the QD active region. Cavity oxide apertures ranged from 2.5 to 0.7 µm, and the devices …”

Section: Planar Microcavity Device Designmentioning

confidence: 99%

Electrically Driven Quantum Light Sources

Boretti

Rosa

Mackie

et al. 2015

Advanced Optical Materials

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Typical applications of quantum light require optical sources which generate either individual photons or entangled (correlated) photons. For the sake of practicality and scalability, these quantum sources should be easily produced, operate at room temperature, and be electrically excited and controlled. Here, recent research on quantum sources obtained from electrically driven (ED) devices constructed from p-n junctions integrated in planar optical cavities, micropillars, nanowires, photonic crystals, and active plasmonic elements is reviewed. Single-photon and entangled-photon sources are distinguished by their different roles in the development of either quantum cryptography or quantum computing protocols, and the different types of devices used to produce them are highlighted, with a focus on their spectral emission, brightness, and conditions of operation. Achievements to date are summarized and compared with prerequisites for the practical use of these sources. Important recent results that could provide future novel quantum sources are also in focus, where more practical requirements could be addressed by the judicious engineering of materials and careful device design

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“…Emissions from 0D-exciton complexes localized in semiconductor quantum dots (QDs) are one of the most promising candidates for single-photon and/or entangled-photon pair sources [2,3,4,5,6,7,8,9,10,11,12]. Recently, research on semiconductor QD embedded in epitaxially grown nanowire (NW) structures has been a subject of interest in practical nano-scale device applications, such as photon sources, single-electron storage, and quantum logic circuit.…”

Section: Related Contentmentioning

confidence: 99%

Exciton coherence in clean single InP/InAsP/InP nanowire quantum dots emitting in infra-red measured by Fourier spectroscopy

Sasakura

Kumano

Suemune

et al. 2009

J. Phys.: Conf. Ser.

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Abstract. We report optical properties of InP/InAsP/InP nanowire quantum dots and single-photon Fourier spectroscopy of an exciton in a single InAsP quantum dot embedded in an InP nanowire. The coherent length of the time-averaged emission originating from the single InAsP QD was measured by a Mach-Zehnder interferometer inserted in the photoluminescence path. Effects of fluctuations in surrounding excess charges trapped in the InP nanowire were investigated by excitation power and energy dependencies.

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Three-dimensional wavelength-scale confinement in quantum dot microcavity light-emitting diodes

Cited by 29 publications

References 13 publications

Time resolved measurements on low‐density single quantum dots at 1300 nm

Time resolved measurements on low‐density single quantum dots at 1300 nm

Electrically Driven Quantum Light Sources

Exciton coherence in clean single InP/InAsP/InP nanowire quantum dots emitting in infra-red measured by Fourier spectroscopy

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