A 2.4-GHz WLAN receiver fabricated by 90-nm RF CMOS technology, using SIP with external matching networks for the dual IF double downconversion applications has been demonstrated. A high power gain of 36.24 dB with a low DSB noise figure of 2.68 dB has been achieved in an available linearity operation. Therefore, this proposed circuit could improve the design flexibility of back-end stages. , A high gain and low supply voltage LNA for the direct conversion application with 4-KV HBM ESD protection in 90-nm RF CMOS, IEEE Microwave Wireless Compon Lett 16 (2006), 612-614. 3. K.R. Rao, J. Wilson, and M. Ismail, A CMOS RF front-end for a multistandard WLAN receiver, IEEE Microwave Wireless Compon Lett 15 (2005), 321-323. 4. K.High-performance large-inductance embedded inductors in thin array plastic packaging (TAPP) for RF system-in-package applications, ABSTRACT: This article introduces a recursive formula, in which any approximate method can, iteratively, be incorporated to solve electromagnetic scattering problems. The use of extended Born approximation and quasi-analytical approximation in this formula results in two series (algorithms), whose convergence properties are discussed. Numerical examples are given to demonstrate merits and the range of applicability of the new series.This example aims at the study of the IEBA, IQA, and HOGEBA algorithms at low frequencies for two models as follows:Model 1: R ϭ 100 cm, ⌬␦ ϭ 20 mm, b ϭ 0 , b ϭ 0 ϭ 5 0 , ϭ 100 mS/m, source ϭ PW