Three garnet compositions for bubble domain memories

Nielsen, J. W.; Blank, S. L.; Smith, Debra; Vella−Coleiro, G. P.; Hagedorn, F. B.; Barns, R. L.; Biolsi, W. A.

doi:10.1007/bf02655293

Cited by 42 publications

(4 citation statements)

References 19 publications

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“…For thick enough strips or films with PMA, another type of excitation is expected to become prominent, namely the nucleation of horizontal Bloch lines (HBLs) 11 ; there, the DW chirality changes when moving along the DW in the thickness direction of the sample. These Bloch line structures, in particular in various garnet films, have been intensively studied already in the 1970s as they were at the time seen as potential building blocks of novel types of memory devices, the magnetic bubble memories [13][14][15][16] . Many of the related key studies of bubble materials such as garnet films where the presence of Bloch lines is essential for DW dynamics consist of theoretical work coupled with experimental observations [17][18][19][20] .…”

Section: Introductionmentioning

confidence: 99%

Bloch-line dynamics within moving domain walls in 3D ferromagnets

Herranen

Laurson

2017

Phys. Rev. B

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We study field-driven magnetic domain wall dynamics in garnet strips by large-scale threedimensional micromagnetic simulations. The domain wall propagation velocity as a function of the applied field exhibits a low-field linear part terminated by a sudden velocity drop at a threshold field magnitude, related to the onset of excitations of internal degrees of freedom of the domain wall magnetization. By considering a wide range of strip thicknesses from 30 nm to 1.89 µm, we find a non-monotonic thickness dependence of the threshold field for the onset of this instability, proceeding via nucleation and propagation of Bloch lines within the domain wall. We identify a critical strip thickness above which the velocity drop is due to nucleation of horizontal Bloch lines, while for thinner strips and depending on the boundary conditions employed, either generation of vertical Bloch lines, or close-to-uniform precession of the domain wall internal magnetization takes place. For strips of intermediate thicknesses, the vertical Bloch lines assume a deformed structure due to demagnetizing fields at the strip surfaces, breaking the symmetry between the top and bottom faces of the strip, and resulting in circulating Bloch line dynamics along the perimeter of the domain wall.

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Section: Introductionmentioning

confidence: 99%

Bloch-line dynamics within moving domain walls in 3D ferromagnets

Herranen

Laurson

2017

Phys. Rev. B

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“…The discovery that some flux-grown magnetic garnet platelets 'possessed sufficient uniaxial anisotropy to support bubble domains (1,2) has led to a search for garnet compositions suitable for device use. A large number of magnetic garnet compositions have been suggested for use in bubble domain devices (3)(4)(5)(6)(7)(8)(9)(10)(11). Many of these compositions have served well as vehicles for circuit design and prototype device construction, but as the bubble domain memory comes closer to being a practical device for use in a variety of environments, its stability toward temperature changes becomes a major consideration.…”

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confidence: 99%

“…Along with temperature-stable operation, high operational frequencies are also a requirement. The considerations that lead to high speed materials have been discussed previously (11). To achieve stability toward temperature, the Curie temperature of the garnet film must be as high as possible.…”

mentioning

confidence: 99%

Preparation and Properties of Magnetic Garnet Films Containing Divalent and Tetravalent Ions

Blank¹,

Nielsen²,

Biolsi³

1976

J. Electrochem. Soc.

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The relevant phase equilibrium data necessary to grow garnet films containing divalent and tetravalent ions by liquid phase epitaxy are presented. The effects of melt composition on film magnetic properties and film composition are presented as is the influence of growth kinetics on the film magnetic parameters. Work on the false(Y,normalSm,normalCa)3false(normalGe,normalFe)5O12 system is stressed. A coupled distribution coefficient is defined which adequately describes the Ca2+‐Ge4+substitution. The effect of melt depletion on magnetic properties is discussed and data presented to indicate the magnitude of the effect observed in the false(Y,normalSm,normalCa)3false(normalGe,normalFe)5O12 system. An example of the propagation characteristics observed in the false(Y,normalSm,normalCa)3false(normalGe,normalFe)5O12 system is also shown. A technique for controlling the temperature dependence of the collapse field in LPE films is presented. The use of Lu3+ as both a dodecahedral and octahedral substituent is shown to lead to a system flexible enough to meet most of the present device requirements.

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“…Lutetium can be used as catalyst in petroleum cracking in refineries, as organic synthesis, and as an internal standard in ICP-AES. Lutetium aluminum garnet has been proposed to be used as a lens material in immersion lithography (30) and in magnetic bubble memory devices (31). Lutetium also finds its application as detector in positron emission tomography (32) and as a phosphor in LED (33).…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Spectral Interference of Lutetium on Analytes Including Specified Rare Earth Elements Using a CCD Detector-based ICP-AES

Sengupta¹

2015

At.Spectrosc.

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Three garnet compositions for bubble domain memories

Cited by 42 publications

References 19 publications

Bloch-line dynamics within moving domain walls in 3D ferromagnets

Bloch-line dynamics within moving domain walls in 3D ferromagnets

Preparation and Properties of Magnetic Garnet Films Containing Divalent and Tetravalent Ions

Evaluation of Spectral Interference of Lutetium on Analytes Including Specified Rare Earth Elements Using a CCD Detector-based ICP-AES

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