Three-Mask Polysilicon Thin-Film Transistor Biosensor

Zeimpekis, Ioannis; Lombardini, Marta; Ditshego, Nonofo M.J.; Pearce, Stuart; Kiang, Kian Shen; Thomas, O.; Planque, Maurits R.R. de; Chong, Harold M. H.; Morgan, Hywel; Ashburn, P.

doi:10.1109/ted.2014.2315669

Cited by 17 publications

(23 citation statements)

References 19 publications

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“…Polysilicon nanoribbon biosensors were fabricated with different channel lengths using the TFT process detailed in our previous work [ 6 ] and measured in dry and wet ambient. Electrical characterization was performed using an Agilent B1500A I/V-based probe-station (Agilent Technologies Singapore (International) Pte.…”

Section: Methodsmentioning

confidence: 99%

“…Over the past 40 years, Ion Sensitive Field Effect Transistors (ISFETs) have been widely researched for applications as ion [ 1 , 2 ], pH [ 3 ], and protein sensors [ 4 ]. More recently, nanowire and nanoribbon biosensors [ 5 , 6 ] have been developed as improved devices because their high surface-to-volume ratio gives high sensitivity. Nanowires can be fabricated using bottom-up [ 7 ] or top-down [ 8 - 13 ] processes.…”

Section: Introductionmentioning

confidence: 99%

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Study of parasitic resistance effects in nanowire and nanoribbon biosensors

Zeimpekis

Thomas

et al. 2015

Nanoscale Res Lett

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In this work, we investigate sensor design approaches for eliminating the effects of parasitic resistance in nanowire and nanoribbon biosensors. Measurements of pH with polysilicon nanoribbon biosensors are used to demonstrate a reduction in sensitivity as the sensor length is reduced. The sensitivity (normalised conductance change) is reduced from 11% to 5.5% for a pH change from 9 to 3 as the sensing window length is reduced from 51 to 11 μm. These results are interpreted using a simple empirical model, which is also used to demonstrate how the sensitivity degradation can be alleviated by a suitable choice of sensor window length. Furthermore, a differential sensor design is proposed that eliminates the detrimental effects of parasitic resistance. Measurements on the differential sensor give a sensitivity of 15%, which is in good agreement with the predicted maximum sensitivity obtained from modeling.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of parasitic resistance effects in nanowire and nanoribbon biosensors

Zeimpekis

Thomas

et al. 2015

Nanoscale Res Lett

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“…Researchers [1][2][3][4][5][6][7][8][9][10] continue to investigate zinc oxide nanowire field effect transistor (NWFET) transducer as a sensing agent for protein molecules. The task of the transducer is to convert the charge of protein molecules into electrical signal that can then be transmitted for processing [11,12,13]. The device has practical advantages: low costs, abundant, non-toxic, transparent, large excitonic binding energy of 60 meV, soluble, compatible with intercellular material, and wide and direct band gap of 3.37 eV making it highly sensitive [14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Highly Sensitive ZnO NWFET Biosensor Fabricated Using Top-Down Processes

Ditshego

2018

JNanoR

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A highly sensitive low-doped ZnO nanowire field effect transistor (NWFET) biosensor has been fabricated and measured. The low doped biosensor with NWFET transducer was used to sense charge of the following substances: lysozyme (LYSO), phosphate buffered saline (PBS), bovine serum albumin (BSA). It achieved maximum sensitivity of -543.2 % for the PBS-LYSO protein and 13,069 % for the PBS-BSA protein. These results were achieved because the electrical measurement and characterisation was focused on the charge effect of the LYSO and BSA acting on the ZnO nanowire subthreshold region. The nano-fabrication process is stable and reproducible. The high sensitivity of the ZnO NWFET biosensor can be exploited for selective analyte detection by functionalizing the nanowire surface with antibodies and/or other biomolecular probe molecules.

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“…Nanoribbons are typically nanometers thick and a few micrometers wide, thereby eliminating the need for expensive lithography processes. Additionally, thin film transistor (TFT) technologies [16][17] can be employed for nanoribbon fabrication and this can further reduce manufacturing cost by eliminating the use of SOI substrates.…”

Section: Introductionmentioning

confidence: 99%

Effect of subthreshold slope on the sensitivity of nanoribbon sensors

Zeimpekis¹,

Hu²,

Ditshego³

et al. 2016

Nanotechnology

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Abstract. In this work, we investigate how the sensitivity of a nanowire or nanoribbon sensor is influenced by the subthreshold slope of the sensing transistor. Polysilicon nanoribbon sensors are fabricated with a wide range of subthreshold slopes and the sensitivity is characterized using pH measurements. It is shown that there is a strong relationship between the sensitivity and the device subthreshold slope. The sensitivity is characterized using the current sensitivity per pH, which is shown to increase from 1.2%/pH to 33.6%/pH as the subthreshold slope improves from 6.2 V/dec to 0.23 V/dec respectively. We propose a model that relates current sensitivity per pH to the subthreshold slope of the sensing transistor. The model shows that sensitivity is determined only on the subthreshold slope of the sensing transistor and the choice of gate insulator. The model fully explains the values of current sensitivity per pH for the broad range of subthreshold slopes obtained in our fabricated nanoribbon devices. It is also able to explain values of sensitivity reported in the literature, which range from 2.5%/pH to 650%/pH for a variety of nanoribbon and nanowire sensors. Furthermore, it shows that aggressive device scaling is not the key to high sensitivity. For the first time, a figure-of-merit is proposed to compare the performance of nanoscale field effect transistor sensors fabricated using different materials and technologies.

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Three-Mask Polysilicon Thin-Film Transistor Biosensor

Cited by 17 publications

References 19 publications

Study of parasitic resistance effects in nanowire and nanoribbon biosensors

Study of parasitic resistance effects in nanowire and nanoribbon biosensors

Highly Sensitive ZnO NWFET Biosensor Fabricated Using Top-Down Processes

Effect of subthreshold slope on the sensitivity of nanoribbon sensors

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