Submicrometer-thick
layers of hexagonal boron nitride (hBN) exhibit
high in-plane thermal conductivity and useful optical properties,
and serve as dielectric encapsulation layers with low electrostatic
inhomogeneity for graphene devices. Despite the promising applications
of hBN as a heat spreader, the thickness dependence of its cross-plane
thermal conductivity is not known, and the cross-plane phonon mean
free paths (MFPs) have not been measured. We measure the cross-plane
thermal conductivity of hBN flakes exfoliated from bulk crystals.
We find that submicrometer thick flakes exhibit thermal conductivities
up to 8.1 ± 0.5 W m–1 K–1 at 295 K, which exceeds previously reported bulk values by more
than 60%. Surprisingly, the average phonon mean free path is found
to be several hundred nanometers at room temperature, a factor of
5 larger than previous predictions. When planar twist interfaces are
introduced into the crystal by mechanically stacking multiple thin
flakes, the cross-plane thermal conductivity of the stack is found
to be a factor of 7 below that of individual flakes with similar total
thickness, thus providing strong evidence that phonon scattering at
twist boundaries limits the maximum phonon MFPs. These results have
important implications for hBN integration in nanoelectronics and
improve our understanding of thermal transport in two-dimensional
materials.