Three-Terminal Common-Mode EMI Model for EMI Generation, Propagation, and Mitigation in a Full-SiC Three-Phase UPS Module

Ohn, Sungjae; Yu, Jianghui; Rankin, Paul; Sun, Bo; Burgos, Rolando; Boroyevich, Dushan; Suryanarayana, Harish; Belcastro, Christopher

doi:10.1109/tpel.2018.2883714

Cited by 31 publications

(11 citation statements)

References 32 publications

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“…1) are becoming the preferred topology in electric vehicles [12]. SiC-based voltage source converters have also been proposed for uninterruptible power supplies [13], and even to connect an aircraft's generator to its electrical grid [14]. Nevertheless, the industry is not fully taking advantage of WBG properties.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Analysis of Hexagonal Sigma-Delta Modulations for Three-Phase High-Frequency VSC Based on Wide-Bandgap Semiconductors

Lumbreras

Zaragoza

Berbel

et al. 2021

IEEE Trans. Power Electron.

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The efficiency of wide-bandgap (WBG) power converters can be greatly improved using high-frequency modulation techniques. This paper proposes using single-loop and double-loop hexagonal sigma-delta modulation (H-Σ∆ and DH-Σ∆ respectively) for voltage source converters (VSC) that use silicon carbide (SiC) semiconductors. These allow high switching frequencies to operate more efficiently than silicon devices. Thus, Σ∆ modulations are excellent candidates for taking advantage of WBG devices. The proposed modulation techniques allow working with a variable switching frequency, thus producing an extreme reduction in switching losses and mitigating the low-order harmonics in comparison with the classical space vector pulse width modulation (SVPWM) technique, and with the innovative variable switching frequency pulse width modulation (VSFPWM). The performance and losses of both Σ∆ techniques are analysed here using Matlab/Simulink and PLECS, and then compared with SVPWM and VSFPWM. Furthermore, the frequency spectrum and the total harmonic distortion (THD) are evaluated. Experimental results performed on a VSC converter that uses SiC MOSFETs show how H-Σ∆ and DH-Σ∆ greatly improve efficiency and generate fewer low-order harmonics than the SVPWM and VSFPWM strategies do.

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Section: Introductionmentioning

confidence: 99%

Comprehensive Analysis of Hexagonal Sigma-Delta Modulations for Three-Phase High-Frequency VSC Based on Wide-Bandgap Semiconductors

Lumbreras

Zaragoza

Berbel

et al. 2021

IEEE Trans. Power Electron.

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“…In many converters, the coupled inductors are employed to enlarge the voltage conversation ratio which is provided by turns ratio N. However, these converters are usually involved in EMI problems. [14][15][16][17][18][19] The converters with switched capacitor (SC) with switches and capacitors in the power stage have pulsating and discontinuous input current due to the charging and discharging stages of the capacitors. The converters with a high voltage gain that uses neither transformer nor coupled inductors are highly desirable for power sources with low output voltage.…”

Section: Introductionmentioning

confidence: 99%

Implementation and design of an interleaved Cuk converter with selective input current ripple elimination capability

Kalantari

Sani

Sarsabahi

2021

Circuit Theory & Apps

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Nowadays, buck-boost DC-DC converters are widely used in numerous power devices. However, to have a suitable buck-boost DC-DC converter, reducing the input current ripple seems to be necessary. Also, having a lower current ripple at the converter output allows using low-cost, long-life ceramic capacitors instead of electrolytic capacitors. The presented buck-boost converter is made by interleaving two Cuk converters with positive and negative output voltage polarity, which provides the chance to eliminate the input current ripple at the selective duty cycle. The selective duty ratio can be determined by designing the inductors amounts at the input side of both converters. Though a new combination for the buck-boost converter is presented, which has zero input current ripple and low output current ripple which is obtained by output inductors. The converter maximum voltage gain is 2D/1-D and has easy control. In conclusion, a prototype model with 100-W output power is implemented, and the theoretical analysis and laboratory results are compared and validated.

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“…O VER the past decade, the evolution of power electronic converter has been extensively driven by semiconductor devices manufactured by wide bandgap (WBG) materials [1]- [3], i.e., the gallium nitride (GaN) and silicon carbide (SiC) [4]. One of the most popular WBG devices is the SiC MOSFET, as it nicely fits into the need of 1.2-3.3 kV blocking voltage in numerous applications, e.g., gridconnected inverters [5], uninterruptible power supplies [6], [7], railway traction converters [8], and electric vehicles [9], [10].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Switching Oscillations for Silicon Carbide MOSFETs in Three-Level Active Neutral-Point-Clamped Inverters

Chen

Pan

Wang

et al. 2021

IEEE J. Emerg. Sel. Topics Power Electron.

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This paper investigates the multi-frequency switching oscillations of silicon carbide (SiC) MOSFETs in three-level active neutral-point-clamped (3L-ANPC) inverters under three typical commutation modes (i.e., the full mode, outer mode, and inner mode). Multiple switching-oscillation components with various frequencies are identified theoretically for both the fullmode and outer-mode commutations, due to their switching-loop diversities. Oppositely, the inner mode exhibits a single oscillation component as only one switching loop is involved. Three types of double-pulse tests (DPTs) are conducted on a 3L-ANPC inverter demonstrator with SiC MOSFETs, and the switching-oscillation components are extracted accordingly, which match well with the theoretical derivations. Moreover, other switching characteristics closely related, i.e., the oscillation peaks, current overshoots, capacitive charges, and switching energies, are studied and benchmarked according to the DPT results. It is concluded that the full-mode and outer-mode commutations share similarities in terms of switching oscillations, current overshoots, capacitive charges, and turn-on energies. The theoretical findings from this work provide a comprehensive knowledge of the multi-frequency oscillation mechanisms associated with fast-switched 3L-ANPC inverters. Accordingly, the critical parasitic-components are identified, and specific design considerations are proposed to achieve switching-performance improvements.

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Three-Terminal Common-Mode EMI Model for EMI Generation, Propagation, and Mitigation in a Full-SiC Three-Phase UPS Module

Cited by 31 publications

References 32 publications

Comprehensive Analysis of Hexagonal Sigma-Delta Modulations for Three-Phase High-Frequency VSC Based on Wide-Bandgap Semiconductors

Comprehensive Analysis of Hexagonal Sigma-Delta Modulations for Three-Phase High-Frequency VSC Based on Wide-Bandgap Semiconductors

Implementation and design of an interleaved Cuk converter with selective input current ripple elimination capability

Investigation of Switching Oscillations for Silicon Carbide MOSFETs in Three-Level Active Neutral-Point-Clamped Inverters

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