Three-Terminal Devices to Examine Single-Molecule Conductance Switching

Keane, Zachary; Ciszek, Jacob W.; Tour, James M.; Natelson, Douglas

doi:10.1021/nl061117+

Cited by 96 publications

(105 citation statements)

References 29 publications

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“…There are many studies that focus on nanodevices with the integration of nanogap electrodes and organic molecules (small molecules, [153] oligomers, [154,155] polymers, [156] fullerenes, [8,157] and biomolecules, [158][159][160][161] etc.) or other nanometer-sized components (CNTs, [162] nanocrystals, [84,163] etc.)…”

Section: Applicationsmentioning

confidence: 99%

Nanogap Electrodes

2009

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Nanogap electrodes (namely, a pair of electrodes with a nanometer gap) are fundamental building blocks for the fabrication of nanometer‐sized devices and circuits. They are also important tools for the examination of material properties at the nanometer scale, even at the molecular scale. In this review, the techniques for the fabrication of nanogap electrodes, the preparation of assembled devices based on the nanogap electrodes, and the potential application of these nanodevices for analysis of material properties are introduced. The history, the research status, and the prospects of nanogap electrodes are also discussed.

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Section: Applicationsmentioning

confidence: 99%

Nanogap Electrodes

2009

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“…Different from silicon-based devices, molecules can be synthesized with built-in functionality such as switching and rectifying behavior or magnetism. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] However, how to address this functionality electrically remains open. For ensembles of molecules in solution, electrochemistry is used to gain electrical access to redox states by applying an electrode potential to the buffer solution.…”

Section: Introductionmentioning

confidence: 99%

Electrical control over the Fe(II) spin crossover in a single molecule: Theory and experiment

et al. 2011

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We report on theoretical and experimental work involving a particular molecular switch, an [Fecomplex, that utilizes a spin transition ("crossover"). The hallmark of this transition is a change of the spin of the metal ion, S Fe = 0 to S Fe = 2, at fixed oxidation state of the Fe ion. Combining density functional theory and first principles calculations, we demonstrate that within a single molecule this transition can be triggered by charging the ligands. In this process the total spin of the molecule, combining metal ion and ligands, crosses over from S = 0 to S = 1. Three-terminal transport through a single molecule shows indications of this transition induced by electric gating. Such an electric field control of the spin transition allows for a local, fast, and direct manipulation of molecular spins, an important prerequisite for molecular spintronics.

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“…[1][2][3] Three-terminal transport measurements using this geometry are facilitated by using a degenerately doped silicon wafer covered with a thin silicon oxide layer as the substrate. It has been widely assumed that the substrate did not influence the measurement of the intrinsic properties of the material under study.…”

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confidence: 99%

The Role of the Oxygen/Water Redox Couple in Suppressing Electron Conduction in Field‐Effect Transistors

et al. 2009

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The back-gated field-effect transistor (FET) configuration has been central to the study of the electronic transport properties of organic and nanoscale materials. [1][2][3] Three-terminal transport measurements using this geometry are facilitated by using a degenerately doped silicon wafer covered with a thin silicon oxide layer as the substrate. It has been widely assumed that the substrate did not influence the measurement of the intrinsic properties of the material under study. However, Chua et al. [4] recently demonstrated that changing the nature of the dielectric led to ambipolar behavior in FETs made from organic semiconductors that were previously thought to be exclusively hole (p-type) conductors. Silanol groups present on the SiO 2 surface were singled out as the culprits for generating electron traps responsible for suppressing electron (n-type) conduction in these devices. Here we show that the substrate-induced suppression of n-type behavior is not unique to organic FETs, but influences the measurements of all devices fabricated on SiO 2 /Si substrates. By using carbon nanotubes as the testbed, we investigated the impact of the chemical nature of the substrate and of ambient adsorbates on the field-effect switching behavior of both nanoscale and thin-film FETs. Our study revealed that the reduction of n-type conduction occurs when an adsorbed water layer containing solvated oxygen is present on the SiO 2 surface. This finding demonstrates that an electrochemical charge transfer reaction between the semiconducting channel and the aqueous oxygen redox couple is the underlying phenomenon governing the suppression of electron conduction in carbon nanotube devices. This effect should be taken into account when interpreting three-terminal measurements conducted on SiO 2 /Si substrates. We anticipate that the design of electronic devices, [5] chemical sensors, [6] and biosensors [7] that are based on the FET configuration will be largely influenced by the charge transfer mechanism that has been brought to light by this study.Individual carbon nanotube field-effect transistors (CFETs) are the most extensively studied molecular-scale FETs to date.

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Three-Terminal Devices to Examine Single-Molecule Conductance Switching

Cited by 96 publications

References 29 publications

Nanogap Electrodes

Nanogap Electrodes

Electrical control over the Fe(II) spin crossover in a single molecule: Theory and experiment

The Role of the Oxygen/Water Redox Couple in Suppressing Electron Conduction in Field‐Effect Transistors

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