Threshold resistance switching in silicon-rich SiO _x thin films

Abstract

Si-rich SiOx and amorphous Si clusters embedded in SiOx films were prepared by the radio-frequency magnetron cosputtering method and high-temperature annealing treatment. The threshold resistance switching behavior was achieved from the memory mode by continuous bias sweeping in all films, which was caused by the formation of clusters due to the local overheating under a large electric field. Besides, the I–V characteristics of the threshold switching showed a dependence on the annealing temperature and the SiOx thickness. In particular, formation and rupture of conduction paths is considered to be the switching mechanism for the 39 nm-SiOx film, while for the 78 nm-SiOx film, adjusting of the Schottky barrier height between insulator and semiconductor is more reasonable. This study demonstrates the importance of investigation of both switching modes in resistance random access memory.

Self-rectifying threshold resistive switching based non-volatile memory of CBD/CBD grown vertical n-ZnO nanowire/p-Si heterojunction diodes

“…In the first voltage sweep cycle, when the applied voltage reaches to ~ 11.9 V, the current of the device increases rapidly from 4.38 mA to 34.21 mA, thereby indicates that the diode achieves electrical transition from high resistance state (HRS) to low resistance state (LRS) leading to "ON" state. Similar switching characteristics have been reported which claims such interesting behavior as 'Threshold resistive switching' [25, [31][32][33]. Such an abrupt increase of current at 11.9 V (threshold / set voltage) is attributed to the electroforming process of conducting filament inside ZnO [9,34] and consequently the device is switched to LRS (ON) state.…”

High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors

“…[11][12][13] Compared with nonvolatile memory-based neurons that require an additional circuit to complete the reset operation, the TS memristor shows automatic reset function, which greatly reduces the power consumption and circuit cost. [14][15][16] Chalcogenide compounds represented by Ge 2 Sb 2 Te 5 (GST) have been widely used in the PCRAM because they can be rapidly and reversibly switched between the crystalline and amorphous states by current and laser pulses, and have good durability. [17][18][19][20] Electrochemical metallization (ECM) kinetics is generally difficult to change due to its fixed dielectric layer material.…”