Threshold Selector and Capacitive Coupled Assist Techniques for Write Voltage Reduction in Metal–Ferroelectric–Metal Field-Effect Transistor

Raman, Siddhartha Raman Sundara; Nibhanupudi, S. S. Teja; Saha, Atanu; Gupta, Sumeet Kumar; Kulkarni, Jaydeep P.

doi:10.1109/ted.2021.3121348

Cited by 4 publications

(1 citation statement)

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“…The write operation in these bitcells are accomplished by applying a voltage at the gate, and the voltage across the ferroelectric capacitor is an indication of the bitcell content. In the case of read, a read disturb voltage is applied on the top terminal of the ferroelectric capacitor, causing a voltage division, thereby enabling a higher voltage at the gate of the MOSFET, thereby implying a higher current through the FET which would imply '1' and '0' if the current through the MOSFET is lower [35][36][37].…”

Section: Ferroelectric Field Effect Transistor (Fefet)mentioning

confidence: 99%

A Review on Non-Volatile and Volatile Emerging Memory Technologies

Raman Sundara Raman

2024

Computer Memory and Data Storage

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As technology scaling is approaching a stand-still with architectural advancements on modern day processors struggling to improve performance, coupled with the rise in machine learning topologies demanding better performing processors, there is a pressing need to address the reasons behind today’s performance bottleneck. These reasons include long access latency of memory technologies, scalability of memory designs, energy inefficiency incurred by increased performance, and additional area overhead. To explore these issues, a holistic understanding of existing memory technologies is essential. In this chapter, a review of different memory designs starting from volatile memory technologies such as Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), NAND/NOR flash to emerging non-volatile memory technologies such as Resistive Random Access Memory (RRAM), Magneto-resistive random access memory (MRAM), Ferroelectric Field effect transistor (FeFET) is presented, with specific consideration of tradeoffs involving area, performance, energy.

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Section: Ferroelectric Field Effect Transistor (Fefet)mentioning

confidence: 99%