Threshold switching effects in AgTlSe2 and CuTlSe2 films

Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

“…The obtained values, given in Table 5 are in good agreement with those obtained for other amorphous semiconductor films [8,15,19,22,23]. Moreover, the agreement of the obtained values of the ratioε/E σ2 given in Table 4 with those values obtained earlier and derived theoretically [9] for the breakdown process, it can be concluded that the observed memory type switching can be interpreted on the basis of an electrothermal breakdown process.…”

Temperature dependence of electrical and thermal properties of Te82.2Ge13.22Si4.58glassy alloy

“…Thus it is concluded that either heat treatment or aging for long periods may improve the switching properties. Such an improvement has been observed in some other amorphous chalcogenide semiconductors [3][4][5].…”

“…The research on amorphous materials has been intensive due to their interesting electrical, optical and magnetic properties. Certain of these amorphous semiconductors show a sudden change in resistance, they are generally grouped as switching properties [1][2][3][4][5][6]. Glasses or amorphous materials consisting of elements such as As, S, Se, Te, Si and Ge are electronic rather than ionic conductors [7], although the resistivities are usually high.…”

Electrical and switching properties of Se85Te15−xSbx (0≤x≤6at.wt%) thin films

“…According to Eq. (6) and using the value of E values of T breakdown were calculated for the investigated film compositions in the temperature range (297-333 K) are given in Table 5 and this agreement with those obtained for other amorphous semiconductor films [9,22,[42][43][44][45]. It can be concluded that the observed memory type switching can be interpreted on the basis of the electrothermal breakdown process.…”