1973
DOI: 10.1088/0022-3727/6/17/318
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Threshold switching in gallium telluride single crystals

Abstract: Gallium telluride single crystals have been grown and cleaved to form thin platelet specimens. Small-area contacts on opposite faces produce threshold switching characteristics when high fields are applied across them, while large-area contact produce memory switching. Detailed measurements of conductivity under DC and pulsed conditions are presented, and the threshold switching is interpreted in terms of a thermal mechanism.

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Cited by 19 publications
(7 citation statements)
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“…14 All three materials exhibit the same structure: they are layered compounds of Ga 2 X 2 stoichiometry in which each layer consists of two AA-stacked hexagonal sublayers of gallium atoms sandwiched between two hexagonal sublayers of chalcogen atoms (X), as illustrated in Fig. 1.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…14 All three materials exhibit the same structure: they are layered compounds of Ga 2 X 2 stoichiometry in which each layer consists of two AA-stacked hexagonal sublayers of gallium atoms sandwiched between two hexagonal sublayers of chalcogen atoms (X), as illustrated in Fig. 1.…”
Section: Introductionmentioning
confidence: 99%
“…In the bulk form, GaS and GaSe are indirect-gap semiconductors 12 , with the latter being well-known for its nonlinear optical properties 13 , while GaTe is a directgap semiconductor used for electrothermal threshold switching 14 . All three materials exhibit the same structure: they are layered compounds of Ga 2 X 2 stoichiometry in which each layer consists of two AA-stacked hexagonal sublayers of gallium atoms sandwiched between two hexagonal sublayers of chalcogen atoms (X), as illustrated in Fig.…”
Section: Introductionmentioning
confidence: 99%
“…For our best GaTe samples the figure of merit at 300K is Z = 37.27K -1 . One determines this value by using the published value of K [20] which is equal to 10.1WK -1 m -1 . The highest value of Z for GaTe permits the practical application as thermoelectric element.…”
Section: Resultsmentioning
confidence: 99%
“…The variation of a typical off-state characteristic with temperature is shown in figure 3 which is a plot of In Z/V against Ylj2 over the range 145-290 K and is generally of the same form as those of the virgin state where, over a wide range of field and temperature, the graphs are linear. This was interpreted in the previous paper (Milne and Anderson 1973) in terms of a Poole-Frenkel process.…”
Section: Of-state DC Propertiesmentioning
confidence: 87%
“…In a previous paper (Milne and Anderson 1973) monostable (threshold) switching in single crystals of gallium monotelluride was reported. This paper presents the results of a study of memory switching in the same crystals.…”
Section: Introductionmentioning
confidence: 96%