Threshold Voltage Control for MONOS Nonvolatile Memory with High-k HfN/HfO₂ Stacked Layers for Analog Memory Application

Abstract

In this paper, we have investigated the threshold voltage (VTH) control of metal-oxide-nitride-oxide-Si (MONOS) nonvolatile memory (NVM) with high-k HfN/HfO2 stacked layers for analog memory application. The Si surface atomically flattening was found to significantly improve the VTH controllability of the MONOS NVM with high-k HfN/HfO2 stacked layers. The multi-level-cell (MLC) operation by controlling the program voltage at the source and drain was demonstrated utilizing MONOS NVM with high-k HfN/HfO2 stacked layers.