Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation

Naramura, Takuro; Inaba, Masafumi; Mizuno, Sho; Igarashi, Keisuke; Kida, Eriko; Falina, Shaili; Shintani, Yukihiro; Kawarada, Hiroshi

doi:10.1063/1.4991364

Cited by 7 publications

(10 citation statements)

References 19 publications

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“…While for metal‐semiconductor FETs (MESFETs), there is an intrinsic problem of forward bias limitation. Normally off MOSFETs were reported through channel structure modification, defective gate oxides, surface treatments, and ion implantation . However, in most of the cases, the principle is based on the generation of defects, which degrade the device performance as well as the controllability.…”

Section: Introductionmentioning

confidence: 99%

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Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

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tical applications due to the high input impedance, breakdown voltage, and integration ability. Tremendous efforts have been made to achieve low subthreshold swing (SS) MOSFETs on low-dimensional materials to overcome the thermal limit of 60 mV dec −1 in conventional CMOS technology. [8][9][10] On the other hand, growing attention has also been paid to the extreme semiconductors MOSFETs based on 2DHG and 2DEG for the applications in high-power, high-frequency, and high temperature electronics. [11][12][13] However, state-of-the-art conventional MOSFETs based on low-dimensional channels such as 2DHG or 2DEG always exhibit normally on (depletion mode) behavior and show uncertainty in threshold voltage. [8][9][10][11][12][13][14][15][16] Energy-efficient normally off (enhancement mode) FETs with low SS values and tunable threshold voltage are strongly in demand from the viewpoint of energy-saving, safety aspects, gate reliability, and electronic circuit simplicity. [17] Junction FET by using p-n junction or Schottky metal gate can achieve normally off operation. [18,19] Nevertheless, many wide-bandgap semiconductors suffer from"asymmetric doping" limitation. For example, n-type dopants with shallow energy levels in diamond and stable p-type doping in ZnO are notoriously difficult. [20,21] For 2D semiconductors, p-n junctions at the MOSFET level has not been achieved yet. These bottlenecks makes inversion-type enhancement-mode MOSFETs difficult, although initial results were reported. [22] While for metal-semiconductor FETs (MES-FETs), there is an intrinsic problem of forward bias limitation. Normally off MOSFETs were reported through channel structure modification, [23] defective gate oxides, [24,25] surface treatments, [26][27][28][29] and ion implantation. [30] However, in most of the cases, the principle is based on the generation of defects, which degrade the device performance as well as the controllability. The formation of recess structure at the gate can successfully lead to normally off operation for 2DEG at the AlGaN/GaN interface, [31] but not applicable to H-terminated diamond and low-dimensional semiconductors.In this work, we propose and demonstrate the device concept of metal-insulator-metal-semiconductor FET (MIMS-FET) based on a 2DHG channel to overcome the drawbacks of MOSFET and MESFET. We show that the MIMS-FET exhibits normally off operation, low subthreshold swing ≈76 mV dec −1 , high drain current, high on/off current ratio over 10 9 , and low gate leakage. These electrical properties are thermally stable up 2D electron and hole gases (2DEG or 2DHG) based on semiconductor surface/interface or 2D materials are promising for next-generation integrated circuits and high-frequency and -power electronics. To reduce power consumption, normally off operation and low-switching-loss metal-oxide fieldeffect transistors (MOSFETs) based on 2DEG or 2DHG are highly in demand. The present methods to achieve normally off MOSFETs have various shortcomings such as reduction in carrier mobility, sacrifice of dra...

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Section: Introductionmentioning

confidence: 99%

“…[18,19] Nevertheless, many wide-bandgap semiconductors suffer from"asymmetric doping" limitation. Normally off MOSFETs were reported through channel structure modification, [23] defective gate oxides, [24,25] surface treatments, [26][27][28][29] and ion implantation. [20,21] For 2D semiconductors, p-n junctions at the MOSFET level has not been achieved yet.…”

mentioning

confidence: 99%

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

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“…To advance the commercial viability of diamond sensors, a polycrystalline diamond with an oxygen-terminated surface was also applied in our previous work. 14,[18][19][20][21] In this study, to verify the superiority and viability of an oxygen-terminated polycrystalline diamond surface with a boron-doped layer for biosensor, a partial carboxyl-termination was introduced for the polycrystalline diamond SGFET. A ss-DNA probe was immobilized on the polycrystalline diamond surface via amino coupling.…”

Section: Introductionmentioning

confidence: 99%

Deoxyribonucleic-acid-sensitive Polycrystalline Diamond Solutiongate Field-effect Transistor with a Carboxyl-terminated Borondoped Channel

2019

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This paper describes a deoxyribonucleic-acid-sensitive electrolyte solution-gate field-effect transistor (SGFET) sensor utilizing a partial carboxyl-terminated boron-doped polycrystalline diamond surface as a linker to connect a deoxyribonucleic acid (DNA) probe. A high density of carboxyl termination on the polycrystalline diamond surface that was employed as a FET channel was achieved using a vacuum ultraviolet system with oxygen gas. A single-stranded DNA probe was immobilized on the polycrystalline diamond channel via amino coupling. The current-voltage characteristics of the polycrystalline diamond SGFET sensor was examined with bias voltages within its potential voltage window. The characteristics of the drain-source current verses the drain-source voltage showed a pinch-off, a shift voltage of up to 40 mV with a coefficient of variation of 4-11% was obtained between hybridization and denaturation. In addition, a single nucleotide mutation of DNA sequence was selectively recognized by the shift voltage up to ca. 10 mV.

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“…We recently reported no-gate-insulator electrolyte-solution-gate field-effect transistors (SGFETs) with a single crystal diamond surface channel [4,5,6,7], with a polycrystalline diamond surface channel, and with a boron-doped diamond surface channel [8,9,10,11]. The ISFET has been a promising candidate for an integrated device to realize a high-response chemical sensor at a low cost.…”

Section: Introductionmentioning

confidence: 99%

An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor

Shintani

Kobayashi

Kawarada

2017

Sensors

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A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2–10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

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Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation

Cited by 7 publications

References 19 publications

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Deoxyribonucleic-acid-sensitive Polycrystalline Diamond Solutiongate Field-effect Transistor with a Carboxyl-terminated Borondoped Channel

An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor

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