Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate

Fregolent, M.; Del Fiol, A.; De Santi, C.; Huber, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.

doi:10.1016/j.microrel.2023.115130

Cited by 4 publications

(1 citation statement)

References 22 publications

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“…During the experiment, the evolution of device parameters such as the threshold voltage, gate capacitance, ON-resistance, and others is monitored as a function of the stress (or recovery) time and applied bias. instance, the evolution of the threshold voltage or the capacitance is usually correlated with traps in the gate insulation in MOSFETs [101][102][103], or the AlGaN barrier in HEMTs [104,105], which is sometimes also coupled with inhibition effects due to defects clustered close to the transistors' channel [106,107]. Moreover, the analysis of the dynamic R ON or the drain current during stress can provide information on defects in the buffer layer [6,7,108] or in the passivation [109,110].…”

Section: Characterization Of Deep Levels In Transistorsmentioning

confidence: 99%

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Fregolent,

Piva,

Buffolo

et al. 2024

J. Phys. D: Appl. Phys.

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The study of deep level defects in semiconductors has always played a strategic role for the development of electronic and optoelectronic devices. In fact, deep levels have a strong impact on many of the device properties, including the efficiency, stability, and reliability because they can drive several physical process. Despite the advancements in crystal growth, wide and ultrawide bandgap semiconductors (such as gallium nitride and gallium oxide) are still strongly affected by the formation of defects that in general can act as carrier traps or generation-recombination centers. Conventional techniques used for deep level analysis in silicon need to be adapted for identifying and characterizing defects in wide bandap materials. This topical review paper presents an overview of reviews the theory of deep levels in semiconductor; in addition, we present a review and original results and on the application, limits and perspectives of two widely adopted most common deep -levels detection techniques, namely capacitance deep level transient spectroscopy and deep level optical spectroscopy, with specific focus on wide bandgap semiconductors. Finally, the most common traps of GaN and β-Ga2O3 are reviewed.

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Section: Characterization Of Deep Levels In Transistorsmentioning

confidence: 99%

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Fregolent,

Piva,

Buffolo

et al. 2024

J. Phys. D: Appl. Phys.

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Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Zagni,

Fregolent,

Fiol

et al. 2024

J. Semicond.

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Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications. Being still in an early development phase, vertical GaN devices are yet to be fully optimized and require careful studies to foster their development. In this work, we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs (TMOS’s) provided by TCAD simulations, enhancing the dependability of the adopted process optimization approaches. Specifically, two different TMOS devices are compared in terms of transfer-curve hysteresis (H) and subthreshold slope (SS), showing a ≈ 75% H reduction along with a ≈ 30% SS decrease. Simulations allow attributing the achieved improvements to a decrease in the border and interface traps, respectively. A sensitivity analysis is also carried out, allowing to quantify the additional trap density reduction required to minimize both figures of merit.

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Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

Zagni,

Fregolent,

Verzellesi

et al. 2024

IEEE Trans. Power Electron.

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Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate

Cited by 4 publications

References 22 publications

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

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